Y10S 438/921
Nonselective diffusion
Y10S438/921 (Nonselective diffusion) appears on 9 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 9
- Published applications
- 0
- Assignees
- 5
- Inventors
- 7
- Latest grant
- 5 Nov 1996
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 3 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method for producing a semiconductor commutator5 Nov 1996US 5,571,747 ACanon Kabushiki Kaisha
- Monocrystalline semiconductor commutator with grain boundry5 Nov 1996US 5,572,044 ACanon Kabushiki Kaisha
- Method of manufacturing a bipolar transistor operating at low temperature29 Oct 1996US 5,569,611 ANEC Corporation
- Selectively programmable interconnections in multilayer integrated circuits11 Feb 1992US 5,087,589 AMassachusetts Institute of Technology
- Semiconductor commutator with grain boundary23 Jul 1991US 5,034,782 ACanon Kabushiki Kaisha
No published applications in this class yet.
Most cited
By later US patents
- Selectively programmable interconnections in multilayer integrated circuits76US 5,087,589 AMassachusetts Institute of Technology · 1992
- Fabrication of interlayer conductive paths in integrated circuits54US 4,843,034 AMassachusetts Institute of Technology · 1989
- Method for making integrated circuit transistors with isolation and substrate connected collectors utilizing simultaneous outdiffusion to convert an epitaxial layer26US 4,168,997 ANational Semiconductor Corporation · 1979
- Method of manufacturing a bipolar transistor operating at low temperature9US 5,569,611 ANEC Corporation · 1996
- Method of fabricating an improved substrate fed logic utilizing graded epitaxial deposition3US 4,140,559 AHarris Corporation · 1979