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US 5,034,782 AGranted
Semiconductor commutator with grain boundary
AssigneeCanon Kabushiki Kaisha
InventorsToru Koizumi, Hidemasa Mizutani
Life of this patent
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Abstract
A semiconductor commutator is provided with first and second semiconductor regions joined at a junction formed therebetween. The first semiconductor region is of the first conductivity type at the second semiconductor region is of the opposite conductivity type. A grain boundary is provided near the junction and within a region, through which a carrier passes, between electrodes respectively provided on the semiconductor regions.
Claims8
A semiconductor commutator comprising:
- a first monocrystalline semiconductor region of a first conductivity type;
- a second monocrystalline semiconductor region of a second conductivity type opposite to the first conductivity type, said second semiconductor region being joined with said first semiconductor region to define a junction therebetween;
- and
- a grain boundary being provided near the junction of said first semiconductor region and said second semiconductor region so as not to cross said junction surface, wherein said grain boundary is disposed in a region, through which a carrier passes, between electrodes respectively provided on said first and second semiconductor regions.
1 more element
Dependencies are inferred from the claim text.