Y10S 438/918
Special or nonstandard dopant
Y10S438/918 (Special or nonstandard dopant) appears on 99 US grants and 25 published applications in this corpus.
Search patents in Y10S- Granted patents
- 99
- Published applications
- 25
- Assignees
- 55
- Inventors
- 178
- Latest grant
- 30 Aug 2016
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 4 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 4 | 0 |
| 1987 | 3 | 0 |
| 1988 | 3 | 0 |
| 1989 | 5 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 3 | 0 |
| 1993 | 4 | 0 |
| 1994 | 4 | 0 |
| 1995 | 1 | 0 |
| 1996 | 3 | 0 |
| 1997 | 4 | 0 |
| 1998 | 6 | 0 |
| 1999 | 7 | 0 |
| 2000 | 6 | 0 |
| 2001 | 3 | 0 |
| 2002 | 3 | 2 |
| 2003 | 1 | 0 |
| 2004 | 1 | 4 |
| 2005 | 5 | 7 |
| 2006 | 1 | 2 |
| 2007 | 3 | 1 |
| 2008 | 1 | 0 |
| 2009 | 3 | 3 |
| 2010 | 2 | 0 |
| 2011 | 1 | 1 |
| 2012 | 0 | 1 |
| 2013 | 1 | 1 |
| 2014 | 2 | 1 |
| 2015 | 1 | 2 |
| 2016 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Tunneling field effect transistor (TFET) formed by asymmetric ion implantation and method of making same30 Aug 2016US 9,431,252 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Silicon wafer and manufacturing method thereof26 Jan 2016US 9,243,345 B2Sumco Corporation
- Tunneling field effect transistor (TFET) formed by asymmetric ion implantation and method of making same31 Mar 2015US 8,993,425 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Silicon wafer and manufacturing method thereof18 Nov 2014US 8,890,291 B2Sumco Corporation
- Penetrating implant for forming a semiconductor device3 Jun 2014US 8,741,720 B2Intel Corporation
- Tunneling Field Effect Transistor (TFET) Formed By Asymmetric Ion Implantation and Method of Making Same2 Jul 2015US 2015/0187584 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Silicon wafer and manufacturing method thereof26 Feb 2015US 2015/0054134 A1Sumco Corporation
- Tunneling Field Effect Transistor (TFET) Formed By Asymmetric Ion Implantation and Method of Making Same19 Jun 2014US 2014/0170827 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Penetrating implant for forming a semiconductor device29 Aug 2013US 2013/0224926 A1Intel Corporation
- Silicon wafer and manufacturing method23 Feb 2012US 2012/0043644 A1Sumco Corporation
Most cited
By later US patents
- Method for manufacturing a semiconductor device containing a crystallization promoting material208US 5,585,291 ASemiconductor Energy Laboratory Co.Ltd. · 1996
- Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby142US 5,731,626 ALucent Technologies Inc. · 1998
- Process for controlling dopant diffusion in a semiconductor layer132US 6,043,139 ALucent Technologies Inc. · 2000
- Semiconductor device having improved lamination-structure reliability for buried layers, silicide films and metal films, and a method for forming the same60US 6,008,124 AMatsushita Electric Industrial Co., Ltd. · 1999
- Interface texturing for light-emitting device56US 6,410,348 B1United Epitaxxy Company, Ltd. · 2002