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US 6,043,139 AGranted
Process for controlling dopant diffusion in a semiconductor layer
AssigneeLucent Technologies Inc.
InventorsDavid James Eaglesham, Hans-Joachim Ludwig Gossmann, John Milo Poate, Peter Adriaan Stolk
Life of this patent
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Abstract
Diffusion of ion-implanted dopant is controlled by incorporating electrically inactive impurity in a semiconductor layer by at least one crystal growth technique.
Claims35
A process for making a microelectronic device which comprises:
- (a) incorporating a diffusion-suppressing amount of electrically inactive impurity in a crystal growth flux;
- (b) depositing a crystalline first semiconductor layer on a crystalline semiconductor substrate by at least one crystal growth technique from said crystal growth flux;
- and
- (c) forming a second semiconductor layer on the first semiconductor layer, the second semiconductor layer containing an electrically active dopant.
1 more element
A process for making a microelectronic device which comprises:
- a) incorporating a diffusion-suppressing amount of electrically inactive impurity in a crystal growth flux, wherein the electrically inactive impurity is substitutional carbon;
- (b) depositing an epitaxial silicon first semiconductor layer on a crystalline semiconductor substrate by at least one crystal growth technique from said crystal growth flux, said first semiconductor layer containing said substitutional carbon;
- and
- c) depositing an epitaxial silicon second semiconductor layer on the first semiconductor layer, the second semiconductor layer containing an electrically active dopant.
1 more element
A process for making a microelectronic device which comprises:
- a) incorporating a diffusion-suppressing amount of electrically inactive impurity in a crystal growth flux;
- b) depositing an epitaxial silicon first semiconductor layer on a crystalline semiconductor substrate by chemical vapor deposition of said crystal growth flux, said first semiconductor layer containing said electrically inactive impurity;
- and
- c) depositing a second semiconductor layer on the first semiconductor layer, the second semiconductor layer containing an electrically active dopant.
1 more element
A process for making a microelectronic device which comprises:
- a) incorporating a diffusion-suppressing amount of electrically inactive impurity in a crystal growth flux;
- b) depositing a crystalline first semiconductor layer from said crystal growth flux on a crystalline semiconductor substrate by at least one crystal growth technique, said first semiconductor layer containing said electrically inactive impurity;
- and
- c) ion implanting an electrically active dopant in the first semiconductor layer containing said electrically inactive impurity.
1 more element
A process for growing a semiconductor layer having substitutional carbon incorporated therein which comprises:
- a) introducing a mixture of carbon-containing gas and silicon-containing gas in a ratio of from about 1:1 to about 1:10,000 into a chamber with a crystalline semiconductor substrate therein;
- and
- b) decomposing said mixture in said chamber under chemical vapor deposition conditions to form an epitaxial layer of silicon containing a diffusion suppressing amount of carbon on said crystalline semiconductor substrate.
A process for growing a semiconductor layer having substitutional carbon incorporated therein which comprises:
- a) introducing a mixture of carbon-containing gas and silicon-containing gas in a ratio of from about 1:1 to about 1:10,000, said mixture further containing a dopant into a chamber with a crystalline semiconductor substrate therein;
- and
- b) decomposing said mixture under chemical vapor deposition conditions to form an epitaxial layer of silicon containing said dopant and a diffusion suppressing amount of carbon on said crystalline semiconductor substrate.
A process for fabricating a microelectronic device which comprises:
- a) depositing a crystalline silicon semiconductor layer from a crystal growth flux containing silicon and substitutional carbon to form a substrate by at least one crystal growth technique, and
- b) introducing dopant into the crystalline silicon semiconductor layer of the substrate to fabricate the device at the crystalline silicon semiconductor layer.
A process for fabricating a microelectronic device comprising:
- a) providing a crystal growth flux which includes a silicon containing gas;
- b) providing a carbon containing gas;
- c) depositing a first layer of silicon which contains substitutional carbon onto a substrate, the silicon and carbon being derived from the silicon containing gas and the carbon containing gas;
- d) depositing a second layer of silicon onto the first layer of silicon, the second layer of silicon containing substantially no substitutional carbon;
- and,
- e) implanting at least one dopant into the second layer of silicon.
3 more elements
Dependencies are inferred from the claim text.