Silicon wafer and manufacturing method
AssigneeSumco Corporation
InventorsToshiaki Ono, Wataru Ito, Jun Fujise
Life of this patent
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Abstract
A method of manufacturing a silicon wafer provides a silicon wafer which can reduce the precipitation of oxygen to prevent a wafer deformation from being generated and can prevent a slip extension due to boat scratches and transfer scratches serving as a reason for a decrease in wafer strength, even when the wafer is provided to a rapid temperature-rising-and-falling thermal treatment process.
Claims43
A method of manufacturing a silicon epitaxial wafer which is provided to a semiconductor device manufacturing process having a thermal treatment process of which the highest temperature is equal to or higher than 1050° C. and equal to or lower than the melting point of silicon and of which the temperature rising and falling rate is equal to or higher than 150° C./sec, the method comprising:
- an epitaxial process of causing an epitaxial layer to grow on the surface of a substrate, which is doped with boron so as to have resistivity of 0.02 Ωcm to 1 kΩcm and of which the initial oxygen concentration Oi is in the range of 14.0×1017 to 22×1017 atoms/cm3 (Old-ASTM);
- and
- a precipitation, dissolution, and thermal treatment process of treating a wafer in the treatment temperature range of 1150° C. to 1300° C., the retention time range of 5 sec to 1 min, and the temperature-falling rate range of 10° C./sec to 0.1° C./sec,
- wherein the precipitation, dissolution, and thermal treatment process is performed before or after the epitaxial process.
A method of manufacturing a silicon epitaxial wafer which is provided to a semiconductor device manufacturing process having a thermal treatment process of which the highest temperature is equal to or higher than 1050° C. and equal to or lower than the melting point of silicon and of which the temperature rising and falling rate is equal to or higher than 150° C./sec, the method comprising:
- an epitaxial process of causing an epitaxial layer to grow on the surface of a substrate, which is doped with nitrogen of 1×1013 to 5×1014 atoms/cm3;
- and
- a precipitation, dissolution, and thermal treatment process of treating a wafer in the treatment temperature range of 1200° C. to 1300° C., the retention time range of 5 sec to 1 min, and the temperature-falling rate range of 10° C./sec to 0.1° C./sec after the epitaxial process.
A method of manufacturing a silicon epitaxial wafer which is provided to a semiconductor device manufacturing process having a thermal treatment process of which the highest temperature is equal to or higher than 1050° C. and equal to or lower than the melting point of silicon and of which the temperature rising and falling rate is equal to or higher than 150° C./sec, the method comprising:
- an epitaxial process of causing an epitaxial layer to grow on the surface of a substrate, which is doped with boron so as to have resistivity of 0.02 Ωcm to 0.001 Ωcm and of which the initial oxygen concentration Oi is in the range of 11.0×1017 to 3×1017 atoms/cm3 (Old-ASTM).
A method of manufacturing a silicon epitaxial wafer which is provided to a semiconductor device manufacturing process having a thermal treatment process of which the highest temperature is equal to or higher than 1050° C. and equal to or lower than the melting point of silicon and of which the temperature rising and falling rate is equal to or higher than 150° C./sec, the method comprising:
- an epitaxial process of causing an epitaxial layer to grow on the surface of a substrate, which is doped with boron so as to have resistivity of 0.02 Ωcm to 0.001 Ωcm and of which the initial oxygen concentration Oi is in the range of 11.0×1017 to 18×1017 atoms/cm3 (Old-ASTM);
- and
- a precipitation, dissolution, and thermal treatment process of treating a wafer in the treatment temperature range of 1150° C. to 1300° C., the retention time range of 5 sec to 1 min, and the temperature-falling rate range of 10° C./sec to 0.1° C./sec before the epitaxial process.
A method of manufacturing a silicon wafer which is provided to a semiconductor device manufacturing process having a thermal treatment process of which the highest temperature is equal to or higher than 1050° C. and equal to or lower than the melting point of silicon and of which the temperature rising and falling rate is equal to or higher than 150° C./sec, the method comprising:
- a silicon single crystal pulling process of pulling a straight body portion of a silicon single crystal as a defect-free region not having grown-in defects using the Czochralski method;
- a mirror treatment process of mirror finishing a sliced wafer;
- and
- a precipitation, dissolution, and thermal treatment process of treating a wafer in the atmosphere of non-oxidizing gas not containing nitrogen in the treatment temperature range of 950° C. to 1200° C., with a retention time range of 5 sec to 1 min, and with a temperature-falling rate range of 10° C./sec to 0.1° C./sec,
- wherein the precipitation, dissolution, and thermal treatment process is performed before or after the mirror treatment process.
A method of manufacturing a silicon wafer which is provided to a semiconductor device manufacturing process having a thermal treatment process of which the highest temperature is equal to or higher than 1050° C. and equal to or lower than the melting point of silicon and of which the temperature rising and falling rate is equal to or higher than 150° C./sec, the method comprising:
- a silicon single crystal pulling process of pulling a straight body portion of a silicon single crystal using the Czochralski method so as to include a defect-free region not having grown-in defects and an OSF region;
- a mirror treatment process of mirror finishing a sliced wafer;
- and
- a precipitation, dissolution, and thermal treatment process of treating a wafer in the atmosphere of non-oxidizing gas not containing nitrogen in the treatment temperature range of 1225° C. to 1350° C., the retention time range of 5 sec to 1 min, and the temperature-falling rate range of 10° C./sec to 0.1° C./sec,
- wherein the precipitation, dissolution, and thermal treatment process is performed before or after the mirror treatment process.
A method of manufacturing a silicon wafer which is provided to a semiconductor device manufacturing process having a thermal treatment process of which the highest temperature is equal to or higher than 1050° C. and equal to or lower than the melting point of silicon and of which the temperature rising and falling rate is equal to or higher than 150° C./sec, the method comprising:
- a silicon single crystal pulling process of pulling a straight body portion of a silicon single crystal as a region having a void defect using the Czochralski method;
- a precipitation, dissolution, and thermal treatment process of treating a wafer in the atmosphere of non-oxidizing gas not containing nitrogen in the treatment temperature range of 950° C. to 1200° C., the retention time range of 5 sec to 1 min, and the temperature-falling rate range of 10° C./sec to 0.1° C./sec;
- and
- a DZ treatment process of performing high-temperature annealing treatment on a sliced wafer in the atmosphere of non-oxidizing gas of H2 and/or Ar at 1100° C. or higher for 30 min or more to eliminate the void defect in the wafer surface layer which is a device forming region after the precipitation, dissolution, and thermal treatment process.
A method of manufacturing a silicon wafer which is provided to a semiconductor device manufacturing process having a thermal treatment process of which the highest temperature is equal to or higher than 1050° C. and equal to or lower than the melting point of silicon and of which the temperature rising and falling rate is equal to or higher than 150° C./sec, the method comprising:
- a silicon single crystal pulling process of pulling a straight body portion of a silicon single crystal as a region being doped with nitrogen of 1×1013 to 5×1014 atoms/cm3 and having a void defect using the Czochralski method;
- a precipitation, dissolution, and thermal treatment process of treating a wafer in the atmosphere of non-oxidizing gas not containing nitrogen in the treatment temperature range of 1225° C. to 1350° C., the retention time range of 5 sec to 1 min, and the temperature-falling rate range of 10° C./sec to 0.1° C./sec;
- and
- a DZ treatment process of performing high-temperature annealing treatment on a sliced wafer in the atmosphere of non-oxidizing gas of H2 and/or Ar at 1100° C. or higher for 30 min or more to eliminate the void defect in the wafer surface layer which is a device forming region after the precipitation, dissolution, and thermal treatment process.
A method of manufacturing a silicon wafer which is provided to a semiconductor device manufacturing process having a thermal treatment process of which the highest temperature is equal to or higher than 1050° C. and equal to or lower than the melting point of silicon, the method comprising:
- a pulling process of pulling a silicon single crystal using the Czochralski method;
- and
- a mirror treatment process of mirror finishing a sliced wafer,
- wherein the pulling process is performed so that a straight body portion of the silicon single crystal is pulled as a defect-free region not having grown-in defects,
- a Pv region which is a vacancy-dominant defect-free region distributed concentrically in the outer peripheral edge of a wafer obtained by slicing the silicon single crystal is not present in a region within 20 mm in the diameter direction from the outer peripheral edge of the wafer to the center of the wafer, and
- the other region includes a Pi region which is an interstitial-silicon-dominant defect-free region.
A silicon wafer manufactured by the method of manufacturing a silicon wafer according to 15.
Dependencies are inferred from the claim text.