Y10S 438/922
Diffusion along grain boundaries
Y10S438/922 (Diffusion along grain boundaries) appears on 26 US grants and 6 published applications in this corpus.
Search patents in Y10S- Granted patents
- 26
- Published applications
- 6
- Assignees
- 15
- Inventors
- 39
- Latest grant
- 8 May 2012
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 4 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 1 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 1 |
| 2007 | 0 | 1 |
| 2008 | 1 | 1 |
| 2009 | 0 | 0 |
| 2010 | 2 | 3 |
| 2011 | 1 | 0 |
| 2012 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Semiconductor element, method for manufacturing same, and electronic device including same8 May 2012US 8,173,487 B2Sharp Kabushiki Kaisha
- Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor6 Mar 2012US 8,129,292 B2Infineon Technologies AG
- Integrated circuit arrangement with Shockley diode or thyristor and method for production and use of a thyristor15 Feb 2011US 7,888,701 B2Infineon Technologies AG
- Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor16 Mar 2010US 7,679,103 B2Infineon Technologies AG
- Development or removal of block copolymer or PMMA-b-S-based resist using polar supercritical solvent12 Jan 2010US 7,645,694 B2International Business Machines Corporation
- Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor13 May 2010US 2010/0117116 A1Infineon Technologies AG
- Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor13 May 2010US 2010/0120208 A1Infineon Technologies AG
- Semiconductor element, method for manufacturing same, and electronic device including same25 Feb 2010US 2010/0044702 A1Sharp Kabushiki Kaisha
- Development or removal of block copolymer or pmma-b-s-based resist using polar supercritical solvent9 Oct 2008US 2008/0248655 A1International Business Machines Corporation
- Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor12 Jul 2007US 2007/0158750 A1Infineon Technologies AG
Most cited
By later US patents
- Method of fabricating a thin film polysilicon thin film transistor or resistor86US 5,037,766 AIndustrial Technology Research Institute · 1991
- Semiconductor device and method of manufacturing the same64US 5,763,953 AKabushiki Kaisha Toshiba · 1998
- Radiation responsive device62US 4,062,038 AInternational Business Machines Corporation · 1977
- Method for fabricating storage electrode of semiconductor device53US 5,639,689 AHyundai Electronics Industries Co., Ltd. · 1997
- Method of diffusing a metal through a silver electrode to form a protective film on the surface of the electrode40US 5,529,954 AKabushiki Kaisha Toshiba · 1996