Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor

An integrated circuit arrangement comprising:

• an anode region located in a substrate, the anode region doped in accordance with a p doping type;
• a cathode region located in the substrate, the cathode region spaced apart from the anode region and doped in accordance with an n doping type in the substrate;
• an n-type inner region doped in accordance with the n doping type and with a lower dopant concentration in comparison with the anode region, said n-type inner region adjoining the anode region in the substrate;
• a p-type inner region doped in accordance with the p doping type and with a lower dopant concentration in comparison with the cathode region, said p-type inner region adjoining me cathode region and the n-type inner region in the substrate,
• a p-type well containing a maximum dopant concentration along a first path running counter to the direction of the normal to a surface of the substrate and through or at the cathode region down to a depth at which the maximum dopant concentration of the p-type well is situated, the maximum dopant concentration of the p-type inner region remains below the maximum p-type dopant concentration of the p-type well;
• and/or
• in an n-type well containing a maximum n-type dopant concentration, along a second path running counter to the direction of the normal to the surface of the substrate and through or at the anode region down to a depth at which the maximum dopant concentration of the n-type well is situated, the maximum dopant concentration of the n-type inner region remains below the maximum n-type dopant concentration of the n-type well.