Loading patent…
AssigneeInternational Business Machines Corporation
InventorsMatthew E. Colburn, Dmitriy Shneyder, Shahab Siddiqui
Estimating the term…
Methods of developing or removing a select region of block copolymer films using a polar supercritical solvent to dissolve a select portion are disclosed. In one embodiment, the polar supercritical solvent includes chlorodifluoromethane, which may be exposed to the block copolymer film using supercritical carbon dioxide (CO2) as a carrier or chlorodiflouromethane itself in supercritical form. The invention also includes a method of forming a nano-structure including exposing a polymeric film to a polar supercritical solvent to develop at least a portion of the polymeric film. The invention also includes a method of removing a poly(methyl methacrylate-b-styrene) (PMMA-b-S) based resist using a polar supercritical solvent.
A method of forming a nano-structure, the method comprising the steps of:
A method of developing a block copolymer in a semiconductor fabrication process, the method comprising the steps of:
A method of removing a poly(methyl methacrylate-b-styrene) (PMMA-b-S)-based resist, the method comprising the steps of:
Dependencies are inferred from the claim text.