Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor

#This application claims priority to German Patent Application DE 10 2005 056 908.0, filed Nov. 29, 2005, which is herein incorporated in its entirety by reference.

#1. Field of the Invention

#The invention relates to an integrated circuit arrangement containing a Shockley diode (four-region diode) or a thyristor.

#FIG. 1 illustrates a Shockley diode according to the invention;

#FIG. 2 illustrates a thyristor according to the invention;

#FIG. 3 illustrates an illustration of a transient response of the thyristor to a portion by portion linear current rise with a rise time tr equal to 1 nanosecond; and

#FIG. 1 shows an integrated circuit arrangement 10 containing a substrate 11. In the exemplary embodiment, the substrate 11 is a monocrystalline silicon substrate. A Shockley diode 12 is formed in the substrate 11 of the integrated circuit arrangement 10. Moreover, the substrate 11 carries a multiplicity of integrated semiconductor components, for example a multiplicity of field-effect transistors 14, in particular n-channel field effect transistors.

#The Shockley diode 12 contains an anode region 16, at which an anode connection A is connected. The anode region 16 is p-doped and doped with a dopant concentration whose maximum lies for example within the range of 1019 to 1021 dopant atoms per cubic centimeter, in particular within the range of 1020 to 1021 dopant atoms per cubic centimeter.

#The anode region 16 is situated in an n-type well 18, the maximum dopant concentration of which lies for example within the range of 1015 to 1018 dopant atoms per cubic centimeter, in particular within the range of 1016 to 1017 dopant atoms per cubic centimeter. The n-type well 18 is also referred to as the n-type inner region in connection with the Shockley diode 12. At the same planar main area HF of the substrate 11 at which the anode connection A is also connected, a cathode connection K is connected to a cathode region 22. The cathode region 22 contains an n-type dopant concentration within the range of, for example, 1019 to 1021 dopant atoms per cubic centimeter, in particular within the range of 1020 to 1021 dopant atoms per cubic centimeter. A p-type inner region 23 of the Shockley diode 12 is adjacent to the cathode region 22 as the substrate depth increases. In the exemplary embodiment, the p-type inner region 23 contains, alongside a partial region of the substrate 11 with basic doping, an optional p-type region 20 having a dopant concentration lying, for example, within the range of 1017 to 1018 dopant atoms per cubic centimeter. In another exemplary embodiment, however, the p-type inner region is formed only by a partial region 23 of the p-type substrate 11, which, by way of example, only has a dopant concentration within the range of 1013 to 1015 dopant atoms per cubic centimeter, in particular within the range of 1014 to 0.5 1015 dopant atoms per cubic centimeter.