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US 7,888,701 B2Granted
Integrated circuit arrangement with Shockley diode or thyristor and method for production and use of a thyristor
AssigneeInfineon Technologies AG
InventorsUlrich Glaser, Harald Gossner, Kai Esmark
Life of this patent
Estimating the term…
Abstract
An integrated circuit arrangement includes a Shockley diode or a thyristor. An inner region of the diode or of the thyristor is completely or partially shielded during the implantation of a p-type well. This gives rise to a Shockley diode or a thyristor having improved electrical properties, in particular with regard to the use as an ESD protection element.
Claims14
An integrated circuit arrangement comprising:
- an anode region located in a substrate, the anode region doped in accordance with a p doping type;
- a cathode region located in the substrate, the cathode region spaced apart from the anode region and doped in accordance with an n doping type in the substrate;
- an n-type inner region doped in accordance with the n doping type and with a lower dopant concentration in comparison with the anode region, said n-type inner region adjoining the anode region in the substrate;
- a p-type inner region doped in accordance with the p doping type and with a lower dopant concentration in comparison with the cathode region, said p-type inner region adjoining the cathode region and the n-type inner region in the substrate;
- a p-type well containing a maximum dopant concentration along a first path running counter to the direction of the normal to a surface of the substrate and through or at the cathode region down to a depth at which the maximum dopant concentration of the p-type well is situated, the maximum dopant concentration of the p-type inner region remains below the maximum p-type dopant concentration of the p-type well;
- and/or
- in an n-type well containing a maximum n-type dopant concentration, along a second path running counter to the direction of the normal to the surface of the substrate and through or at the anode region down to a depth at which the maximum dopant concentration of the n-type well is situated, the maximum dopant concentration of the n-type inner region remains below the maximum n-type dopant concentration of the n-type well;
- wherein the anode region, the cathode region, the n-type inner region and the p-type inner region are constituent parts of an electrostatic discharge protection element of the integrated circuit arrangement;
- wherein the anode region or the cathode region is connected to an external connection of the integrated circuit arrangement.
6 more elements
Dependencies are inferred from the claim text.