US 5,529,954 A · Method of diffusing a metal through a silver electrode to form a protective film on the surface of the electrode

Abstract

A semiconductor device includes a first metal film formed on a semiconductor substrate, a second metal film formed on the first metal film and containing silver as a main component, and a protective film containing a metal element of the first metal film and covering at least the upper surface of the second metal film. The protective film is formed by annealing in an atmosphere containing a predetermined element. That is, the metal element of the first metal film is diffused into the second metal film and reacts with the predetermined element in the atmosphere on the surface of the second metal film, thereby forming the protective film. Aggregation of silver is prevented in the presence of the protective film.

Claims5

Dependent claims

A method of manufacturing a semiconductor device, comprising the steps of:

forming a first metal film containing a first metal element on a semiconductor substrate;
forming a second metal film consisting essentially of silver or containing silver as a main component on said first metal film;
and
performing annealing in an atmosphere containing a second element to diffuse the first metal element in said first metal film into the surface of said second metal film so as to form a third film containing the second element and the first metal element on the surface of the second metal film.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

08/480,733Filed 7 Jun 1995 · continuation

Priority

JP 5-0159145 Jan 1993

Granted

25 Jun 1996

Term ends

Not estimatedThe source records don’t support an estimate.

Classification25 codes

H10W 20/077
Of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers: on sidewalls or on…
H10D 64/0111
Of electrodes ohmically coupled to a semiconductor: to Group IV semiconductors
H10W 20/032
Of conductive parts of the interconnections: of conductive barrier, adhesion or liner layers
H10W 20/033
Of conductive barrier, adhesion or liner layers: in openings in dielectrics

Method of diffusing a metal through a silver electrode to form a protective film on the surface of the electrode

Life of this patent

Method of diffusing a metal through a silver electrode to form a protective film on the surface of the electrode

Life of this patent

Abstract

Claims5