Y10S 438/924
To facilitate selective etching
Y10S438/924 (To facilitate selective etching) appears on 123 US grants and 44 published applications in this corpus.
Search patents in Y10S- Granted patents
- 123
- Published applications
- 44
- Assignees
- 71
- Inventors
- 230
- Latest grant
- 2 Jul 2019
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 4 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 3 | 0 |
| 1985 | 2 | 0 |
| 1986 | 4 | 0 |
| 1987 | 4 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 5 | 0 |
| 1991 | 3 | 0 |
| 1992 | 7 | 0 |
| 1993 | 6 | 0 |
| 1994 | 4 | 0 |
| 1995 | 4 | 0 |
| 1996 | 4 | 0 |
| 1997 | 4 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 4 | 1 |
| 2002 | 2 | 2 |
| 2003 | 3 | 3 |
| 2004 | 2 | 3 |
| 2005 | 0 | 4 |
| 2006 | 4 | 4 |
| 2007 | 4 | 4 |
| 2008 | 2 | 5 |
| 2009 | 7 | 5 |
| 2010 | 5 | 2 |
| 2011 | 5 | 2 |
| 2012 | 1 | 2 |
| 2013 | 0 | 0 |
| 2014 | 0 | 1 |
| 2015 | 2 | 0 |
| 2016 | 1 | 1 |
| 2017 | 0 | 4 |
| 2018 | 3 | 1 |
| 2019 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Microstructure processing method and microstructure processing apparatus2 Jul 2019US 10,336,609 B2Hitachi, Ltd.
- Etch rate modulation through ion implantation25 Jun 2019US 10,332,748 B2Varian Semiconductor Equipment Associates, Inc.
- Atomic layer etching of tungsten and other metals9 Oct 2018US 10,096,487 B2Lam Research Corporation
- Bottom processing10 Jul 2018US 10,020,204 B2APPLIED Materials.Inc.
- Etch rate modulation through ion implantation3 Apr 2018US 9,934,982 B2Varian Semiconductor Equipment Associates, Inc.
- Etch Rate Modulation Through Ion Implantation28 Jun 2018US 2018/0182636 A1Varian Semiconductor Equipment Associates, Inc.
- Microstructure processing method and microstructure processing apparatus21 Dec 2017US 2017/0362082 A1Hitachi, Ltd.
- Bottom processing14 Sep 2017US 2017/0263466 A1APPLIED Materials.Inc.
- Etch Rate Modulation Through Ion Implantation22 Jun 2017US 2017/0178914 A1Varian Semiconductor Equipment Associates, Inc.
- Atomic layer etching of tungsten and other metals23 Feb 2017US 2017/0053810 A1Lam Research Corporation
Most cited
By later US patents
- Methods of forming carbon-containing layers242US 6,251,802 B1Micron Technology, Inc. · 2001
- Method of making an electrostatic silicon accelerometer118US 5,006,487 AHoneywell Inc. · 1991
- Method of manufacturing semiconductor device having a pressure sensor111US 4,618,397 AHitachi, Ltd. · 1986
- Semiconductor device and method of fabricating the same109US 6,638,781 B1Semiconductor Energy Laboratory Co.Ltd. · 2003
- Method of making micromachined refractory metal field emitters103US 4,685,996 A1987