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US 6,638,781 B1Granted
Semiconductor device and method of fabricating the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYoshiharu Hirakata, Yuugo Goto, Yuko Kobayashi, Shunpei Yamazaki
Life of this patent
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Abstract
There is provided a high quality liquid crystal panel having a thickness with high accuracy, which is designed, without using a particulate spacer, within a free range in accordance with characteristics of a used liquid crystal and a driving method, and is also provided a method of fabricating the same. The shape of a spacer for keeping a substrate interval constant is made such that it is a columnar shape, a radius R of curvature is 2 μm or less, a height H is 0.5 μm to 10 μm, a diameter is 20 μm or less, and an angle α is 65° to 115°. By doing so, it is possible to prevent the lowering of an opening rate and the lowering of light leakage due to orientation disturbance.
Claims102
A semiconductor device comprising:
- a first substrate;
- second substrate;
- and
- a plurality of columnar spacers disposed between said first substrate and said second substrate, each of said columnar spacers having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate, and
- wherein a radius R of curvature of said edge is 2 μm or less.
2 more elements
A method of fabricating a semiconductor device comprising the steps of:
- forming a thin film transistor over a substrate;
- forming a leveling film to cover said thin film transistor;
- forming an opening in said leveling film to reach to said thin film transistor and forming a pixel electrode;
- forming an alignment film on said pixel electrode;
- performing a rubbing processing on said alignment film;
- and
- forming a columnar spacer comprising an insulating film over a contact portion where said thin film transistor is connected to said pixel electrode after forming said alignment film,
- wherein said columnar spacers have at least an upper surface, a side surface, and an edge between said upper surface and said side surface, and
- wherein a radius R of curvature of said edge is 2 μm or less.
6 more elements
A method of fabricating a semiconductor device comprising the steps of:
- forming a thin film transistor over a substrate;
- forming a leveling film to cover said thin film transistor;
- forming an opening in said leveling film to reach to said thin film transistor and forming a pixel electrode;
- forming a columnar spacer comprising an insulating film over a contact portion where said thin film transistor is connected to said pixel electrode;
- forming an alignment to cover said pixel electrode and said columnar spacer;
- and
- performing a rubbing processing on said alignment film,
- wherein said columnar spacers have at least an upper surface, a side surface, and an edge between said upper surface and said side surface, and
- wherein a radius R of curvature of said edge is 2 μm or less.
6 more elements
A semiconductor device comprising:
- a first substrate;
- a second substrate;
- and
- a columnar spacer disposed between said first substrate and said second substrate, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate, and
- wherein a radius of curvature of said edge is 2 μm or less, and a height of said columnar spacer is 10 μm or less.
2 more elements
A semiconductor device comprising:
- a first substrate;
- a second substrate;
- and
- a columnar spacer disposed between said first substrate and said second substrate, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate, and
- wherein a radius of curvature of said edge is 2 μm or less, and a width of said columnar spacer is 20 μm or less.
2 more elements
A semiconductor device comprising:
- first substrate;
- second substrate;
- and
- columnar spacer disposed between said first substrate and said second substrate, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate, and
- wherein a radius of curvature of said edge is 2 μm or less, and an angle between a tangent at a center of a side columnar spacer and a substraate surface is 65° to 115°.
2 more elements
A semiconductor device comprising:
- a first substrate;
- a second substrate;
- and
- a columnar spacer disposed between said first substrate and said second substrate, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate, and
- wherein a radius of curvature of said edge is 2 μm or less, a height of said columnar spacer is 10 μm or less, and a width of said columnar spacer is 20 μm or less.
2 more elements
A semiconductor device comprising:
- a first substrate;
- a second substrate;
- and
- a columnar spacer disposed between said first substrate and said second substrate, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate, and
- wherein a radius of curvature of said edge is 2 μm or less, a height of said columnar spacer is 10 μm or less, and an angle between a tangent plane at a center of a side of said columnar spacer and a substrate surface is 65° to 115°.
2 more elements
A semiconductor device comprising:
- a first substrate;
- a second substrate;
- and
- a columnar spacer disposed between said first substrate and said second substrate, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate, and
- wherein a radius of curvature of said edge is 2 μm or less, a width of said columnar spacer is 20 μm or less, and an angle between a tangent plane at a center of a side of said columnar spacer and a substrate surface is 65° to 115°.
2 more elements
A semiconductor device comprising:
- a first substrate;
- a second substrate;
- and
- a columnar spacer disposed between said first substrate and said second substrate, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate, and
- wherein a radius of curvature of said edge is 2 μm or less, a height of said columnar spacer is 10 μm or less, a width of said columnar spacer is 20 μm or less, and an angle between a tangent plane at a center of a side of said columnar spacer and a substrate surface is 65° to 115°.
2 more elements
A semiconductor device comprising:
- a thin film transistor over a first substrate;
- a pixel electrode electrically connected to said thin film transistor;
- a columnar spacer over said first substrate, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate;
- and
- a light-shielding film provided over said second substrate,
- wherein said columnar spacer is located below said light-shielding film, and
- wherein a radius R of curvature of said edge is 2 μm or less.
4 more elements
A semiconductor device comprising:
- a thin film transistor over a-first substrate;
- a pixel electrode electrically connected to said thin film transistor in a contact hole;
- a columnar spacer on said contact hole, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate;
- and
- a light-shielding film provided over said second substrate,
- wherein said columnar spacer is located below said light-shielding film, and
- wherein a radius R of curvature of said edge is 2 μm or less.
4 more elements
A semiconductor device comprising:
- a thin film transistor over a first substrate;
- a pixel electrode electrically connected to said thin film transistor;
- a columnar spacer over said first substrate, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate and a radius R of curvature of said edge is 2 μm or less;
- and
- a light-shielding film provided over said second substrate,
- wherein said columnar spacer is overlapped with said light-shielding film.
3 more elements
A semiconductor device comprising:
- a thin film transistor over a first substrate;
- a pixel electrode electrically connected to said thin film transistor in a contact hole;
- a columnar spacer on said contact hole, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate and a radius R of curvature of said edge is 2 μm or less;
- and
- a light-shielding film provided over said second substrate, wherein said columnar spacer is overlapped with said light-shielding film.
2 more elements
Dependencies are inferred from the claim text.