Microstructure processing method and microstructure processing apparatus

A microstructure processing method comprising the steps of:

• (a) applying an ion beam to a workpiece to form a hole having a tapered shape in the workpiece without supplying an etching gas to the workpiece;
• (b) stopping the application of the ion beam to the workpiece;
• (c) while the ion beam is not applied to the workpiece and without supplying the etching gas to the workpiece, supplying a non-etching gas to the workpiece at an oblique angle to an upper surface of the workpiece to cause the gas molecules of the non-etching gas to be adsorbed onto the upper surface of the workpiece and a sidewall of the hole;
• (d) stopping the supply of the non-etching gas to the workpiece;
• and
• (e) while the non-etching gas is not supplied to the workpiece, applying the ion beam to the workpiece to perform film formation using the adsorbed gas molecules and to perform etching on the hole to increase an inclination of the sidewall,
• wherein a processing shape of the workpiece is controlled by controlling a supply time of the non-etching gas.