Y10S 438/916
Autodoping control or utilization
Y10S438/916 (Autodoping control or utilization) appears on 39 US grants and 7 published applications in this corpus.
Search patents in Y10S- Granted patents
- 39
- Published applications
- 7
- Assignees
- 26
- Inventors
- 74
- Latest grant
- 12 Apr 2011
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 1 | 2 |
| 2002 | 2 | 1 |
| 2003 | 2 | 0 |
| 2004 | 0 | 1 |
| 2005 | 1 | 1 |
| 2006 | 0 | 0 |
| 2007 | 1 | 1 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 0 | 0 |
| 2011 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of producing an epitaxial layer on semiconductor substrate and device produced with such a method12 Apr 2011US 7,923,339 B2NXP B. V.
- Method and apparatus for forming a semiconductor substrate with a layer structure of activated dopants8 May 2007US 7,214,592 B2Interuniversitair Microelektronica Centrum (IMEC)
- Suppression of n-type autodoping in low-temperature Si and SiGe epitaxy4 Jan 2005US 6,838,359 B2Koninklijke Philips Electronics N. V.
- Method of preventing autodoping21 Oct 2003US 6,635,556 B1Matrix Semiconductor, Inc.
- Solid-state pickup element and method for producing the same29 Jul 2003US 6,599,772 B2Sony Corporation
- Method of producing an epitaxial layer on semiconductor substrate and device produced with such a method10 Dec 2009US 2009/0305488 A1Koninklijke Philips Electronics N. V.
- Method and apparatus for forming a semiconductor substrate with a layer structure of activated dopants22 Nov 2007US 2007/0267660 A1Interuniversitair Microelektronica Centrum (IMEC)
- Method and apparatus for forming a semiconductor substrate with a layer structure of activated dopants26 May 2005US 2005/0112831 A1Interuniversitair Microelektronica Centrum (IMEC)
- Method of preventing autodoping29 Jan 2004US 2004/0018731 A1Matrix Semiconductor, Inc.
- Suppression of n-type autodoping in low-temperature Si and SiGe epitaxy14 Nov 2002US 2002/0168791 A1Koninklijke Philips Electronics N. V.
Most cited
By later US patents
- Bifacial solar cell151US 5,665,175 A1997
- Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby142US 5,731,626 ALucent Technologies Inc. · 1998
- Process for controlling dopant diffusion in a semiconductor layer132US 6,043,139 ALucent Technologies Inc. · 2000
- Masking technique for depositing gallium arsenide on silicon72US 5,256,594 AIntel Corporation · 1993
- Method of making diffused doped areas for semiconductor components53US 5,461,002 A1995