Masking technique for depositing gallium arsenide on silicon
AssigneeIntel Corporation
InventorsAlbert T. Wu, Shinji Nozaki, Thomas George, Sandra S. Lee, Masayoshi Umeno
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Abstract
A process for forming GaAs on a silicon substrate with very low levels of unintended silicon doping. First, a dielectric layer of silicon dioxide, silicon nitride, or both is grown or deposited on the substrate. Next, a window is opened in the dielectric layer exposing the silicon substrate in the regions in which the GaAs is to be formed. The GaAs layer is then formed on the substrate using conventional techniques with the gas phase transfer of silicon contamination from the edges and back of the silicon substrate to the GaAs region inhibited by the dielectric layer or layers.
Claims29
A process for the formation of gallium arsenide on a silicon substrate in which silicon contamination of the GaAs layer is inhibited comprising the steps of:
- depositing a dielectric layer on said substrate to substantially cover the top, bottom and edge of said substrate;
- exposing a predetermined region of said substrate by removing portions of said dielectric layer;
- forming a gallium arsenide layer on said predetermined region of said substrate.
A process for the formation of gallium arsenide on a silicon substrate in which silicon contamination of the GaAs layer is inhibited comprising the steps of:
- depositing a first dielectric layer on the top, bottom and edge of said substrate;
- depositing a second dielectric layer on said first dielectric layer;
- exposing a predetermined region of said substrate by removing portions of said first and said second dielectric layers;
- forming a gallium arsenide layer on said predetermined region.
A process for the formation of gallium arsenide on a silicon substrate in which silicon contamination of the GaAs layer is inhibited comprising the steps of:
- depositing a first silicon dioxide layer of approximately 200-2000 angstroms thickness on said substrate;
- depositing a silicon nitride layer of approximately 500-2000 angstroms thickness on said first silicon dioxide layer;
- removing a portion of said silicon nitride layer such that a predetermined region of said silicon nitride layer remains atop said first silicon dioxide layer;
- depositing a second silicon dioxide layer on said first silicon dioxide layer;
- removing said predetermined region of said silicon nitride layer to expose an underlying predetermined region of said first silicon dioxide layer;
- removing said underlying predetermined region of said first silicon dioxide layer to expose a portion of said silicon substrate;
- forming a gallium arsenide layer on said exposed portion of said silicon substrate.
Dependencies are inferred from the claim text.