Solid-state pickup element and method for producing the same

A method for producing a solid-state imaging element, comprising:

• forming an overflow barrier area at a position in a semiconductor substrate of a first conductivity type;
• forming an epitaxial layer on said semiconductor substrate;
• forming matrix-arrayed light receptive sensor parts on a surface of said epitaxial layer by forming a first semiconductor area of said first conductivity type with a positive charge accumulating area formed thereon;
• forming a charge collecting area in said epitaxial layer below said first semiconductor area of said first conductivity type and reaching said overflow barrier area;
• and
• forming a second semiconductor area of said first conductivity type at a position in said charge collecting area upward of said overflow barrier area and below said charge accumulating area.

A method for producing a solid-state imaging element, comprising:

• forming an overflow barrier area at a position in a semiconductor substrate of a first conductivity type;
• forming a first epitaxial layer on said semiconductor substrate;
• forming a second epitaxial layer on said first epitaxial layer;
• forming matrix-arrayed light receptive sensor parts on a surface of said second epitaxial layer by forming said first semiconductor area of a first conductivity type with a positive charge accumulating area formed thereon;
• forming a charge collecting area in said second epitaxial layer below said first semiconductor area of said first conductivity type and reaching said overflow barrier area;
• and
• forming a second semiconductor area of said first conductivity type at a position in said charge collecting area upward of said overflow barrier area and below said charge accumulating area.

A method for producing a solid-state imaging element, comprising:

• forming an overflow barrier area at a position in a semiconductor substrate of a first conductivity type;
• forming an epitaxial layer on said semiconductor substrate;
• forming matrix-arrayed light receptive sensor parts on a surface of said epitaxial layer by forming a first semiconductor area of said first conductivity type with a positive charge accumulating area formed thereon;
• forming a second semiconductor area of said first conductivity type at a position upward of said overflow barrier area and below said charge accumulating area;
• forming a first channel stop area proximate a charge accumulating area and below said light receptive sensor parts;
• and
• forming a second channel stop below said first channel stop at a same depth as said second semiconductor area.