Suppression of n-type autodoping in low-temperature Si and SiGe epitaxy
AssigneeKoninklijke Philips Electronics N.V.
InventorWiebe Barteld De Boer
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Abstract
A method of manufacturing a semiconductor device, which method comprises the step of epitaxially growing a stack comprising an n-type doped layer of a semiconductor material followed by at least one further layer of a semiconductor material, the stack being grown in one continuous cycle.
Claims11
A method of manufacturing a semiconductor device comprising the steps of:
- epitaxially growing a stack comprising an n-type doped layer of a semiconductor material without first exposing the semiconductor material to a high temperature step of approximately 1000° C. while subjecting the layer simultaneously to a gas flow of an Si precursor and n-type dopant gas for which at least one of a phosphorus-containing compound and an arsenic-containing compound is applied;
- simultaneously stopping flow of the n-type dopant gas and commencing the flow of GeH4 gas;
- growing a first SiGe layer;
- after completing the first SiGe layer, commencing a flow of B2H6 to form the p-type doped layer;
- and
- after completion of the p-type doped layer, simultaneously stopping the B2H6 gas flow and commencing growth of a further layer of semiconductor material, the stack further comprising said further layer and being grown in one continuous growth cycle without any purging cycles.
A method of manufacturing a semiconductor device, which method comprises the step of epitaxially growing a stack comprising an n-typed doped layer of a semiconductor material followed by at least one further layer of a semiconductor material, the stack being grown in one continuous cycle at a low temperature of 700° C. without first healing a wafer to a high temperature of approximately 1000° C. prior to the step of epitaxially growing the stack, and wherein said epitaxial stack is not a capping layer.
Dependencies are inferred from the claim text.