Method of producing an epitaxial layer on semiconductor substrate and device produced with such a method

Method of producing a semiconductor product comprising the steps of:

• providing a semiconductor substrate;
• providing a Si—X layer on at least part of said semiconductor substrate, the Si—X layer having a first depth and X representing a predetermined atom species;
• providing said at least part of said semiconductor substrate with a doped layer with an n-type dopant material and having a second depth substantially greater than said first depth;
• performing an oxidation action to form a silicon dioxide layer having a silicon dioxide/silicon interface within said semiconductor substrate, such that X atoms and n-type atoms are pushed into said semiconductor substrate by said silicon dioxide layer at said silicon dioxide/silicon interface, said X atoms being selected such that they have a higher segregation property at said silicon dioxide/silicon interface than said n-type atoms;
• removing said silicon dioxide layer;
• growing an epitaxial layer of silicon on said semiconductor substrate.