Y10S 438/915
Amphoteric doping
Y10S438/915 (Amphoteric doping) appears on 22 US grants and 1 published applications in this corpus.
Search patents in Y10S- Granted patents
- 22
- Published applications
- 1
- Assignees
- 18
- Inventors
- 33
- Latest grant
- 27 Apr 2004
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 3 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 1 |
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer27 Apr 2004US 6,727,549 B1Intel Corporation
- Semiconductor device having capacitor and method of manufacturing the same4 Jun 2002US 6,399,457 B2Samsung Electronics Co., Ltd.
- Semiconductor device having capacitor and method of manufacturing the same17 Jul 2001US 6,261,890 B1Samsung Electronics Co., Ltd.
- Process for lift off and handling of thin film materials10 Apr 2001US 6,214,733 B1ELO Technologies, Inc.
- Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer25 Apr 2000US 6,054,370 AIntel Corporation
Most cited
By later US patents
- Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer251US 6,054,370 AIntel Corporation · 2000
- Process for lift off and handling of thin film materials128US 6,214,733 B1ELO Technologies, Inc. · 2001
- Intermetallic semiconductor ohmic contact46US 4,583,110 AInternational Business Machines Corporation · 1986
- Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer29US 6,727,549 B1Intel Corporation · 2004
- Method of forming low leakage CMOS device on insulating substrate25US 4,753,895 AHughes Aircraft Company · 1988