Semiconductor device having capacitor and method of manufacturing the same

Abstract

The capacitor of semiconductor devices includes a first electrode, a dielectric layer formed of a metal oxide layer including a Ta2O5 layer, and a second electrode composed of first and second metal nitride layers sequentially stacked. First and second metal nitride layers are a TiN layer and a WN layer. The second electrode of the capacitor is a double-layered structure having the first and second metal nitride layers, and thus annealing after forming the second electrode is performed at 750° C. or less to avoid increasing an equivalent oxide thickness of the dielectric layer.

Dependencies are inferred from the claim text.