Y10S 438/917
Deep level dopants
Official title: Deep level dopants, e.g. gold, chromium, iron or nickel
Y10S438/917 (Deep level dopants) appears on 46 US grants and 21 published applications in this corpus.
Search patents in Y10S- Granted patents
- 46
- Published applications
- 21
- Assignees
- 29
- Inventors
- 73
- Latest grant
- 6 Feb 2018
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 3 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 4 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 1 |
| 2002 | 2 | 1 |
| 2003 | 0 | 2 |
| 2004 | 2 | 1 |
| 2005 | 3 | 4 |
| 2006 | 2 | 2 |
| 2007 | 0 | 1 |
| 2008 | 3 | 1 |
| 2009 | 1 | 1 |
| 2010 | 2 | 2 |
| 2011 | 1 | 0 |
| 2012 | 2 | 2 |
| 2013 | 1 | 1 |
| 2014 | 2 | 0 |
| 2015 | 0 | 1 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material6 Feb 2018US 9,887,510 B2The UAB Research Foundation
- Optically controlled silicon carbide and related wide-bandgap transistors and thyristors7 Oct 2014US 8,853,710 B2Power Integrations, Inc.
- Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material1 Jul 2014US 8,767,789 B2The UAB Research Foundation
- Optically controlled silicon carbide and related wide-bandgap transistors and thyristors4 Jun 2013US 8,455,328 B2Power Integrations, Inc.
- Optically controlled silicon carbide and related wide-bandgap transistors and thyristors5 Jun 2012US 8,193,537 B2Ss Sc IP, LLC
- Method and system for mutliline mir-ir laser21 Jun 2018US 2018/0175579 A1The UAB Research Foundation
- Mid-ir microchip laser: zns:cr2+ laser with saturable absorber material19 Nov 2015US 2015/0333470 A1The UAB Research Foundation
- Optically controlled silicon carbide and related wide-bandgap transistors and thyristors5 Dec 2013US 2013/0320199 A1Power Integrations, Inc.
- Mid-ir microchip laser: zns:cr2+ laser with saturable absorber material6 Sep 2012US 2012/0224599 A1The UAB Research Foundation
- Optically controlled silicon carbide and related wide-bandgap transistors and thyristors23 Aug 2012US 2012/0214275 A1Ss Sc IP, LLC
Most cited
By later US patents
- Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers518US 5,661,053 ASanDisk Corporation · 1997
- Technique of forming over an irregular surface a polysilicon layer with a smooth surface285US 5,595,924 ASanDisk Corporation · 1997
- Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with sidewall spacers130US 5,534,456 ASanDisk Corporation · 1996
- Suppression of boron segregation for shallow source and drain junctions in semiconductors53US 5,960,322 AAdvanced Micro Devices, Inc. · 1999
- Method of patterning polysilicon layers on substrate49US 5,747,359 ASanDisk Corporation · 1998