Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material
AssigneeThe UAB Research Foundation
InventorsSergey B. Mirov, Vladimir V. Fedorov
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AssigneeThe UAB Research Foundation
InventorsSergey B. Mirov, Vladimir V. Fedorov
Estimating the term…
A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2+ thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser deposition or plasma sputtering, thermal annealing of the crystals for effective thermal diffusion of the dopant into the crystal volume with a temperature and exposition time providing the highest concentration of the dopant in the volume without degrading laser performance due to scattering and concentration quenching, and formation of a microchip laser either by means of direct deposition of mirrors on flat and parallel polished facets of a thin Cr:ZnS wafer or by relying on the internal reflectance of such facets. Multiple applications of the laser material are contemplated in the invention.
A laser transmitter comprising:
Dependencies are inferred from the claim text.