Y10S 438/925
Fluid growth doping control
Official title: Fluid growth doping control, e.g. delta doping
Y10S438/925 (Fluid growth doping control) appears on 134 US grants and 15 published applications in this corpus.
Search patents in Y10S- Granted patents
- 134
- Published applications
- 15
- Assignees
- 77
- Inventors
- 239
- Latest grant
- 27 Jan 2015
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 5 | 0 |
| 1978 | 3 | 0 |
| 1979 | 1 | 0 |
| 1980 | 6 | 0 |
| 1981 | 4 | 0 |
| 1982 | 1 | 0 |
| 1983 | 3 | 0 |
| 1984 | 3 | 0 |
| 1985 | 3 | 0 |
| 1986 | 4 | 0 |
| 1987 | 2 | 0 |
| 1988 | 5 | 0 |
| 1989 | 5 | 0 |
| 1990 | 2 | 0 |
| 1991 | 9 | 0 |
| 1992 | 5 | 0 |
| 1993 | 11 | 0 |
| 1994 | 11 | 0 |
| 1995 | 8 | 0 |
| 1996 | 6 | 0 |
| 1997 | 6 | 0 |
| 1998 | 4 | 0 |
| 1999 | 1 | 0 |
| 2000 | 4 | 0 |
| 2001 | 2 | 0 |
| 2002 | 0 | 0 |
| 2003 | 3 | 4 |
| 2004 | 1 | 1 |
| 2005 | 2 | 2 |
| 2006 | 0 | 0 |
| 2007 | 2 | 3 |
| 2008 | 2 | 1 |
| 2009 | 1 | 1 |
| 2010 | 1 | 0 |
| 2011 | 1 | 1 |
| 2012 | 1 | 2 |
| 2013 | 0 | 0 |
| 2014 | 1 | 0 |
| 2015 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of fabricating a high-voltage transistor with an extended drain structure27 Jan 2015US 8,940,605 B2Power Integrations, Inc.
- Methods for controlling wafer curvature30 Dec 2014US 8,918,988 B2International Business Machines Corporation
- Methods and structures for controlling wafer curvature30 Oct 2012US 8,299,615 B2International Business Machines Corporation
- Method of fabricating a high-voltage transistor with an extended drain structure16 Aug 2011US 7,998,817 B2Power Integrations, Inc.
- Method of fabricating a high-voltage transistor with an extended drain structure29 Jun 2010US 7,745,291 B2Power Integrations, Inc.
- Methods and structures for controlling wafer curvature27 Dec 2012US 2012/0329265 A1International Business Machines Corporation
- Method of fabricating a high-voltage transistor with an extended drain structure19 Jan 2012US 2012/0015491 A1Power Integrations, Inc.
- Methods and structures for controlling wafer curvature3 Mar 2011US 2011/0049723 A1International Business Machines Corporation
- Method of fabricating a high-voltage transistor with an extended drain structure17 Sep 2009US 2009/0233407 A1Power Integrations, Inc.
- High-voltage vertical transistor with a multi-gradient drain doping profile1 May 2008US 2008/0102581 A1Power Integrations, Inc.
Most cited
By later US patents
- High efficiency light emitting diodes from bipolar gallium nitride558US 5,210,051 ACree Research, Inc. · 1993
- Compound semi-conductors and controlled doping thereof493US 5,709,745 AOhio Aerospace Institute · 1998
- Process for forming a thin film of silicon200US 5,294,286 AOki Electric Industry Co., Ltd. · 1994
- Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers118US 5,298,452 AInternational Business Machines Corporation · 1994
- Method for producing hyperabrupt doping profiles in semiconductors114US 4,559,091 AThe Regents of the University of California · 1985