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US 8,299,615 B2Granted
Methods and structures for controlling wafer curvature
AssigneeInternational Business Machines Corporation
InventorsMohammed Fazil Fayaz, Jeffery Burton Maxson, Anthony Kendall Stamper, Daniel Scott Vanslette
Life of this patent
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Abstract
Methods and structures for controlling wafer curvature during fabrication of integrated circuits caused by stressed films. The methods include controlling the conductor density of wiring levels, adding compensating stressed film layers and disturbing the continuity of stress films with the immediately lower layer. The structure includes integrated circuits having compensating stressed film layers.
Claims32
A method, comprising:
- forming multiple wiring levels on a wafer from a first wiring level nearest said wafer to a last wiring level, each wiring level of said of multiple wiring levels comprising respective damascene wires in a respective interlevel dielectric layer having a top surface that is coplanar with a top surface of said respective damascene wire;
- forming a dielectric passivation layer on said last wiring level of said multiple wiring levels and a polyimide layer on said passivation layer, said polyimide layer in internal tensile stress;
- and
- wherein a compensating dielectric layer formed above said first wiring level is in internal compressive stress.
1 more element
A structure, comprising:
- multiple wiring levels on a wafer from a first wiring level nearest said wafer to a last wiring level, each wiring level of said of multiple wiring levels comprising respective damascene wires in a respective interlevel dielectric layer having a top surface that is coplanar with a top surface of said respective damascene wire;
- a dielectric passivation layer on said last wiring level of said multiple wiring levels and a polyimide layer on said passivation layer, said polyimide layer in internal tensile stress;
- and
- a compensating dielectric layer formed above said first wiring level, said compensating dielectric layer in internal compressive stress.
1 more element
Dependencies are inferred from the claim text.