US 5,298,452 A · Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers

Abstract

A method and apparatus for depositing single crystal, epitaxial films of silicon on a plurality of substrates in a hot wall, isothermal deposition system is described. The deposition temperatures are less than about 800.degree. C., and the operating pressures during deposition are such that non-equilibrium growth kinetics determine the deposition of the silicon films. An isothermal bath gas of silicon is produced allowing uniform deposition of epitaxial silicon films simultaneously on multiple substrates. This is a flow system in which means are provided for establishing an ultrahigh vacuum in the range of about 10.sup.-9 Torr prior to epitaxial deposition. The epitaxial silicon layers can be doped in-situ to provide very abruptly defined regions of either n- or p-type conductivity.

Claims30

Dependent claims

A method for forming a silicon containing film having less than approximately 500 defects/cm.sup.2 on a substrate, comprising:

introducing said substrate into a vacuum chamber, said vacuum chamber having a thermal region, said substrate being contained within said thermal region;
maintaining said thermal region at a temperature of less than approximately 650.degree. Celsius;
and
introducing a silicon source gas into said vacuum chamber, said silicon source gas containing silicon, said silicon source gas interacting with said substrate to form said silicon containing film having less than 500 defects/cm.sup.2 on said substrate.

1 more element

A method for forming a silicon containing film having a thickness of less than approximately 4,000 Angstroms and less than approximately 500 defects/cm.sup.2 on a substrate, comprising:

introducing said substrate into a vacuum chamber, said vacuum chamber having a thermal region, said substrate being contained within said thermal region;
maintaining said thermal region at a temperature of less than approximately 650.degree. Celsius;
introducing a silicon source gas into said vacuum chamber, said silicon source gas containing silicon, said silicon source gas interacting with said substrate to form said silicon containing film having less than 500 defects/cm.sup.2 on said substrate;
and
discontinuing said interaction before said silicon containing film has a thickness of approximately 4,000 Angstroms.

2 more elements

A method for forming a silicon containing film having

a thickness of less than approximately 4,000 Angstroms and less than approximately 500 defects/cm.sup.2 on a plurality of substrates comprising:
introducing said plurality of substrates into a vacuum chamber, said vacuum chamber having a thermal region, said plurality of substrates being contained within said thermal region;
maintaining said thermal region at a temperature of less than approximately 650.degree. Celsius;
introducing a silicon source gas into said vacuum chamber, said silicon source gas containing silicon, said silicon source gas interacting with said plurality of substrates to form said silicon containing film having less than 500 defects/cm.sup.2 on said plurality of substrates;
and
discontinuing said interaction before said silicon containing film has a thickness of approximately 4,000 Angstroms.

3 more elements

Dependencies are inferred from the claim text.

Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers

Life of this patent

Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers

Life of this patent

Abstract

Claims30