Method for producing hyperabrupt doping profiles in semiconductors
AssigneeThe Regents of the University of California
InventorsFrederick G. Allen, Dwight C. Streit, Robert A. Metzger
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Abstract
A method for achieving extreme and arbitrary doping profiles in semiconductors with dopant concentrations varying over orders of magnitude in a few atomic layers. The method involves evaporating the semiconductor, along with the desired amounts of n- or p- dopants onto an atomically clean substrate semiconductor surface in an ultrahigh vacuum environment at low temperatures such that an amorphous film results. The amorphous film is then crystallized epitaxially by a solid phase epitaxy, thereby providing a single crystal with the desired dopant profile. Multiple profile changes or grading may be included in the semiconductor film by varying dopant concentrations in the amorphous layer as desired.
Claims11
A method for producing arbitrary doping profiles in a semiconductor, comprising:
- simultaneously depositing an amorphous layer of a semiconductor and a dopant onto an atomically clean semiconductor substrate;
- and
- epitaxially crystallizing said amorphous layer to produce an epitaxial film on said substrate, with the doping profile of said epitaxial film being determined by the concentration of said dopant in said amorphous layer.
A method for producing hyperabrupt doping profiles in semiconductors, comprising:
- cleaning a substrate semiconductor surface on an atomic scale;
- depositing a semiconductor film in an amorphous form onto said substrate, thereby producing a growing amorphous layer;
- co-depositing a dopant in said amorphous layer as said layer is growing;
- and
- epitaxially crystallizing said amorphous layer to produce an epitaxial film, whereby an epitaxial film is produced on said substrate with the doping profile in said film being determined by the concentration of said dopant.
Dependencies are inferred from the claim text.