Y10S 438/923
Diffusion through a layer
Y10S438/923 (Diffusion through a layer) appears on 103 US grants and 25 published applications in this corpus.
Search patents in Y10S- Granted patents
- 103
- Published applications
- 25
- Assignees
- 67
- Inventors
- 165
- Latest grant
- 4 Dec 2012
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 4 | 0 |
| 1978 | 3 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 6 | 0 |
| 1993 | 5 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 3 | 0 |
| 1998 | 4 | 0 |
| 1999 | 2 | 0 |
| 2000 | 7 | 0 |
| 2001 | 6 | 1 |
| 2002 | 8 | 4 |
| 2003 | 4 | 3 |
| 2004 | 6 | 4 |
| 2005 | 6 | 5 |
| 2006 | 2 | 2 |
| 2007 | 3 | 1 |
| 2008 | 1 | 1 |
| 2009 | 1 | 0 |
| 2010 | 2 | 3 |
| 2011 | 1 | 0 |
| 2012 | 3 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of fabricating a landing plug in a semiconductor device4 Dec 2012US 8,324,099 B2Hynix Semiconductor Inc.
- Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor6 Mar 2012US 8,129,292 B2Infineon Technologies AG
- Method of fabricating landing plug with varied doping concentration in semiconductor device7 Feb 2012US 8,110,501 B2Hynix Semiconductor Inc.
- Integrated circuit arrangement with Shockley diode or thyristor and method for production and use of a thyristor15 Feb 2011US 7,888,701 B2Infineon Technologies AG
- CMOS image sensor and method for fabricating the same11 May 2010US 7,713,808 B2Dongbu HiTek Co., Ltd.
- Method of Fabricating a Landing Plug in a Semiconductor Device26 Apr 2012US 2012/0100714 A1Hynix Semiconductor Inc.
- Method of Fabricating Landing Plug in Semiconductor Device30 Dec 2010US 2010/0330801 A1Hynix Semiconductor Inc.
- Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor13 May 2010US 2010/0117116 A1Infineon Technologies AG
- Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor13 May 2010US 2010/0120208 A1Infineon Technologies AG
- Cmos image sensor and method for fabricating the same3 Jul 2008US 2008/0157138 A1Dongbu HiTek Co., Ltd.
Most cited
By later US patents
- Method of late programming MOS devices151US 5,091,328 ANational Semiconductor Corporation · 1992
- Method for fabricating a type of trench mask ROM cell81US 6,303,436 B1Mosel Vitelic, Inc. · 2001
- Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure80US 5,324,684 AProcessing Technologies, LLC · 1994
- Process for formation of shallow silicided junctions68US 4,788,160 ATexas Instruments Incorporated · 1988
- Dopant pastes for the production of p, p+, and n, n+ regions in semiconductors64US 6,695,903 B1Merck Patent GmbH · 2004