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US 2008/0157138 A1Published application
Cmos image sensor and method for fabricating the same
AssigneeDongbu HiTek Co., Ltd.
InventorJoung Ho LEE
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Abstract
A complementary metal oxide semiconductor (CMOS) image sensor (CIS) and a method for fabricating the same. A method for fabricating a CIS includes implanting first conductive type dopants in a semiconductor substrate to form a photodiode region in a surface of the semiconductor substrate, implanting second conductive type dopants in the photo diode region to form a second conductive type diffusion region, and implanting fluorine ions in the second conductive type diffusion region to form a fluorine diffusion region.
Claims9
A method for fabricating a CIS, the method comprising:
- implanting first conductive type dopants in a semiconductor substrate to form a photodiode region in a surface of the semiconductor substrate;
- implanting second conductive type dopants in the photo diode region to form a second conductive type diffusion region;
- and
- implanting fluorine ions in the second conductive type diffusion region to form a fluorine diffusion region.
1 more element
A CIS comprising:
- an epitaxial layer formed in a semiconductor substrate;
- a photodiode region formed in the epitaxial layer;
- a first diffusion region formed in the photo diode region;
- and
- a second diffusion region formed in the first diffusion region.
2 more elements
Dependencies are inferred from the claim text.