Y10S 438/919
Compensation doping
Y10S438/919 (Compensation doping) appears on 125 US grants and 39 published applications in this corpus.
Search patents in Y10S- Granted patents
- 125
- Published applications
- 39
- Assignees
- 53
- Inventors
- 177
- Latest grant
- 10 Oct 2017
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 0 | 0 |
| 1978 | 4 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 3 | 0 |
| 1982 | 3 | 0 |
| 1983 | 2 | 0 |
| 1984 | 3 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 3 | 0 |
| 1989 | 5 | 0 |
| 1990 | 3 | 0 |
| 1991 | 5 | 0 |
| 1992 | 4 | 0 |
| 1993 | 3 | 0 |
| 1994 | 5 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 6 | 0 |
| 1999 | 9 | 0 |
| 2000 | 5 | 0 |
| 2001 | 3 | 2 |
| 2002 | 6 | 2 |
| 2003 | 3 | 1 |
| 2004 | 2 | 7 |
| 2005 | 1 | 3 |
| 2006 | 3 | 5 |
| 2007 | 5 | 3 |
| 2008 | 1 | 1 |
| 2009 | 2 | 2 |
| 2010 | 4 | 5 |
| 2011 | 3 | 1 |
| 2012 | 2 | 3 |
| 2013 | 4 | 1 |
| 2014 | 2 | 1 |
| 2015 | 1 | 1 |
| 2016 | 1 | 1 |
| 2017 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Semiconductor device and fabrication method thereof10 Oct 2017US 9,786,787 B2Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device and fabrication method thereof17 May 2016US 9,343,570 B2Semiconductor Energy Laboratory Co.Ltd.
- Modifying work function in PMOS devices by counter-doping3 Mar 2015US 8,969,972 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and fabrication method thereof14 Oct 2014US 8,859,353 B2Semiconductor Energy Laboratory Co.Ltd.
- N-type carrier enhancement in semiconductors4 Feb 2014US 8,642,431 B2International Business Machines Corporation
- Semiconductor Device and Fabrication Method Thereof8 Sep 2016US 2016/0260842 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor Device and Fabrication Method Thereof2 Apr 2015US 2015/0091017 A1Semiconductor Energy Laboratory Co., Ltd.
- Semiconductor Device and Fabrication Method Thereof9 Jan 2014US 2014/0011331 A1Semiconductor Energy Laboratory Co.Ltd.
- Modifying Work Function in PMOS Devices by Counter-Doping1 Aug 2013US 2013/0193521 A1Taiwan Semiconductor Manufacturing Company.Ltd
- N-type carrier enhancement in semiconductors26 Jul 2012US 2012/0190161 A1International Business Machines Corporation
Most cited
By later US patents
- Method of making semiconductor device with decreased channel width and constant threshold voltage123US 6,103,562 ALG Semicon Co., Ltd. · 2000
- N-type carrier enhancement in semiconductors114US 8,178,430 B2International Business Machines Corporation · 2012
- Single mask process for forming both n-type and p-type gates in a polycrystalline silicon layer during the formation of a semiconductor device94US 5,278,085 AMicron Semiconductor, Inc. · 1994
- Reduction of electric field effect in the bird's beak region of a DRAM cell following expansion of active region through local encroachment reduction59US 4,959,325 AMicron Technology, Inc. · 1990
- MOSFET which reduces the short-channel effect54US 4,697,198 AHitachi, Ltd. · 1987