N-type carrier enhancement in semiconductors
AssigneeInternational Business Machines Corporation
InventorsJee Hwan Kim, Stephen W. Bedell, Siegfried Maurer, Devendra K. Sadana
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Abstract
A field effect transistor (FET) has a channel hosted in Ge. The FET has silicon-germanium (SiGe) source and drain formed by selective epitaxy. The SiGe source and drain exert a tensile stress onto the Ge channel. During forming of the SiGe source and drain, an n-type dopant species and a compensating species are being incorporated into the SiGe source and drain. The n-type dopant species and the compensating species are so selected that the size of the SiGe atomic radius is inbetween the dopant atomic radius and the compensating species atomic radius.
Claims2
A method for fabricating a field effect transistor (FET), comprising:
- hosting a channel region of said FET in germanium (Ge);
- forming a source and a drain for said FET using selective epitaxy of SiGe, wherein the composition of said SiGe is so chosen to cause a tensile strain of desired extent for said channel region, wherein said SiGe has a SiGe atomic radius;
- during said forming, incorporating into said SiGe an n-type dopant species and a compensating species, wherein said n-type dopant species has a dopant atomic radius and said compensating species has a compensating atomic radius;
- selecting said n-type dopant species and said compensating species in such manner that the size of said SiGe atomic radius is inbetween said dopant atomic radius and said compensating atomic radius;
- and
- selecting said n-type dopant species to be phosphorous (P), and selecting said compensating species to be antimony (Sb), whereby said P generates n-type carriers, wherein said method further comprises selecting a dose for said P in such manner that a concentration of said n-type carriers in said SiGe is between about 25% and about 75% of the equilibrium solubility limit of P in Ge.
Dependencies are inferred from the claim text.