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US 9,343,570 B2Granted
Semiconductor device and fabrication method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Yasuyuki Arai, Jun Koyama
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Abstract
A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.
Claims19
A semiconductor device comprising:
- a first substrate;
- a second substrate facing to the first substrate;
- a shading film comprising Ti, Cr, or Al over the second substrate, the shading film being located between the first substrate and the second substrate;
- a first transistor over the first substrate;
- a second transistor over the first substrate;
- a first spacer overlapping with a semiconductor layer of the first transistor;
- a second spacer a size of which is different with a size of the first spacer;
- the second spacer overlapping with a semiconductor layer of the second transistor;
- wherein the first spacer and the second spacer comprise a same resin.
6 more elements
A semiconductor device comprising:
- a first substrate;
- a second substrate facing to the first substrate;
- a shading film comprising Ti, Cr, or Al, the shading film being located between the first substrate and the second substrate;
- a first transistor over the first substrate;
- a second transistor over the first substrate;
- an insulating layer over the first transistor and the second transistor;
- the insulating layer include a contact hole;
- a source or drain lead wire over the insulating layer, the source or drain lead wire electrically connected to a source or drain region of the first transistor through the contact hole;
- a first spacer overlapping with a semiconductor layer of the first transistor;
- and
- a second spacer a size of which is different with a size of the first spacer;
- the second spacer overlapping with a semiconductor layer of the second transistor in the contact hole.
9 more elements
Dependencies are inferred from the claim text.