Y10S 438/903
Catalyst aided deposition
Y10S438/903 (Catalyst aided deposition) appears on 66 US grants and 31 published applications in this corpus.
Search patents in Y10S- Granted patents
- 66
- Published applications
- 31
- Assignees
- 47
- Inventors
- 132
- Latest grant
- 4 Sep 2012
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 4 | 0 |
| 1988 | 2 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 4 | 0 |
| 2001 | 5 | 4 |
| 2002 | 4 | 1 |
| 2003 | 2 | 3 |
| 2004 | 2 | 4 |
| 2005 | 4 | 6 |
| 2006 | 2 | 3 |
| 2007 | 4 | 3 |
| 2008 | 3 | 2 |
| 2009 | 5 | 2 |
| 2010 | 1 | 3 |
| 2011 | 2 | 0 |
| 2012 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Insitu post atomic layer deposition destruction of active species4 Sep 2012US 8,257,497 B2Micron Technology, Inc.
- Resistive memory device and method of fabricating the same3 Apr 2012US 8,148,708 B2Hynix Semiconductor Inc.
- Method of manufacturing silicon carbide self-aligned epitaxial MOSFET for high powered device applications9 Aug 2011US 7,994,017 B2Cree, Inc.
- Method of manufacturing silicon nano-structure15 Feb 2011US 7,888,271 B2Hon Hai Precision Industry Co., Ltd.
- Zinc oxide semiconductor and method of manufacturing the same30 Nov 2010US 7,842,539 B2Gwangju Institute of Science and Technology
- Catalyst support substrate, method for growing carbon nanotubes using the same, and transistor using carbon nanotubes10 Jun 2010US 2010/0140588 A1NEC Corporation
- Resistive memory device and method of fabricating the same13 May 2010US 2010/0117041 A1Hynix Semiconductor Inc.
- Method of manufacturing silicon carbide self-aligned epitaxial mosfet for high powered device applications18 Feb 2010US 2010/0041195 A1Cree, Inc.
- Method of manufacturing silicon nano-structure8 Oct 2009US 2009/0253248 A1Hon Hai Precision Industry Co., Ltd.
- Zinc oxide semiconductor and method of manufacturing the same1 Jan 2009US 2009/0001363 A1Gwangju Institute of Science and Technology
Most cited
By later US patents
- Compliant electrically connective bumps for an adhesive flip chip integrated circuit device and methods for forming same117US 5,508,228 AMicroelectronics and Computer Technology Corporation · 1996
- Method of depositing elemental amorphous silicon114US 4,068,020 ASiemens Aktiengesellschaft · 1978
- Tungsten silicide (WSi.sub.x) deposition process for semiconductor manufacture113US 5,231,056 AMicron Technology, Inc. · 1993
- Method for producing low carbon/oxygen conductive layers79US 6,403,414 B2Micron Technology, Inc. · 2002
- Method and apparatus for thin-film deposition, and method of manufacturing thin-film semiconductor device67US 6,653,212 B1Sony Corporation · 2003