Method of manufacturing silicon nano-structure
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsHai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
Life of this patent
Estimating the term…
Abstract
A method for making silicon nano-structure, the method includes the following steps. Firstly, providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of catalyst separately into the reacting room. Thirdly, introducing a silicon-containing gas and hydrogen gas into the reacting room. Lastly, heating the reacting room to a temperature of 500˜1100° C.
Claims20
A method for making silicon nano-structure, the method comprising the following steps of:
- (a) providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a reacting room;
- (b) placing the growing substrate and a quantity of a catalyst, that is separate from the growing substrate, into the reacting room, wherein the catalyst is pure aluminum;
- (c) introducing a silicon-containing gas and a hydrogen gas into the reacting room;
- (d) heating the reacting room to a temperature of about 660° C. to about 1100° C., and the silicon-containing gas reacts with the hydrogen gas under a catalysis of the pure aluminum to fabricate silicon nano-structure on the growing substrate;
- (e) suspending the heating for a period of time to stop fabricating silicon nano-structure;
- and
- (f) restarting heating the reacting room to a temperature of about 660° C. to about 1100° C. to fabricate branched silicon nano-structure on a surface of the silicon nano-structure.
A method for making silicon nano-structure, the method comprising the following steps of:
- (a) providing a growing substrate and a growing device comprising a heating apparatus and a reacting room, wherein the growing substrate is a (100) silicon wafer having a (100) crystal plane;
- (b) placing the growing substrate and a quantity of a catalyst into the reacting room, wherein the catalyst is pure aluminum;
- (c) introducing a silicon-containing gas and a hydrogen gas into the reacting room;
- (d) heating the reacting room to a temperature of about 660° C. to about 1100° C. to fabricate a first silicon nano-structure on the growing substrate, wherein the first silicon nano-structure comprises a plurality of first silicon nano pyramids formed on the (100) crystal plane, and the plurality of first silicon nano pyramids is a single crystalline and grows along a epitaxial <111>direction of the (100) crystal plane;
- and
- (e) suspending the heating for a period of time to stop fabricating the first silicon nano-structure, keeping the growing substrate with the first silicon nano-structure thereon in the reacting room, and then restarting heating the reacting room to a temperature of about 660° C. to about 1100° C. to fabricate a second silicon nano-structure, wherein the second silicon nano-structure comprises a plurality of second silicon nano pyramids formed on the plurality of first silicon nano pyramids and substantially perpendicular to the (100) crystal plane.
Dependencies are inferred from the claim text.