Method of manufacturing silicon nano-structure
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsHai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
Life of this patent
Estimating the term…
Abstract
A method for making silicon nano-structure, the method includes the following steps. Firstly, providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of catalyst separately into the reacting room. Thirdly, introducing a silicon-containing gas and hydrogen gas into the reacting room. Lastly, heating the reacting room to a temperature of 500˜1100° C.
Claims20
A method for making silicon nano-structure, the method comprising the following steps of:
- (a) providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a reacting room;
- (b) placing the growing substrate and a quantity of a catalyst, that is separate from the growing substrate, into the reacting room;
- (c) introducing a silicon-containing gas and a hydrogen gas into the reacting room;
- and
- (d) heating the reacting room to a temperature of 500˜1100° C.
Dependencies are inferred from the claim text.