Zinc oxide semiconductor and method of manufacturing the same

A p-type zinc oxide semiconductor made by:

• forming a zinc oxide thin film containing a group I or V element over a substrate;
• forming a metal catalyst layer over the zinc oxide thin film;
• and
• heat treating the substrate and the metal catalyst layer at a temperature between 400 to 800° C. to convert the zinc oxide thin film into a zinc oxide semiconductor having an electrical characteristic of a p-type semiconductor,
• wherein the metal catalyst layer is formed directly on the zinc oxide thin film.

A method of manufacturing a p-type zinc oxide semiconductor, the method comprising:

• forming a zinc oxide thin film containing a group I or V element over a substrate;
• forming a metal catalyst layer over the zinc oxide thin film;
• and
• heat treating the metal catalyst layer to convert the zinc oxide thin film into a p-type zinc oxide semiconductor,
• wherein the metal catalyst layer is formed directly on the zinc oxide thin film.