Method and apparatus for thin-film deposition, and method of manufacturing thin-film semiconductor device

A thin film forming apparatus comprising a vacuum chamber, a substrate, a thermal catalyst, and a heating means for heating the thermal catalyst, wherein

• a gas introduction system for introducing a gas is connected to the vacuum chamber and wherein the gas is fed from the gas introduction system into the vacuum chamber to form a thin film on a surface of the substrate by utilizing a thermal decomposition reaction and a catalytic reaction by the thermal catalyst,
• the gas introduction system introduces a carrier gas containing hydrogen and a material gas for forming a thin film on the substrate, and
• the carrier gas is fed into the vacuum chamber during at least the formation of the thin film, wherein
• at least a first material gas for forming a first thin film on said substrate and a second material gas for forming a second thin film on said substrate are fed from said gas introduction system, and
• the apparatus comprises a material gas controlling means for introducing said second material gas into said vacuum chamber after an elapse of a predetermined time after said first material gas is discharged from said vacuum chamber.

A thin film forming apparatus comprising a vacuum chamber, a substrate, a thermal catalyst, and a heating means for heating the thermal catalyst, wherein

• a gas introduction system for introducing a gas is connected to the vacuum chamber and wherein the gas is fed from the gas introduction system into the vacuum chamber to form a thin film on a surface of the substrate by utilizing a thermal decomposition reaction and a catalytic reaction by the thermal catalyst,
• the gas introduction system introduces a carrier gas containing hydrogen and a material gas for forming a thin film on the substrate, and
• the carrier gas is fed into the vacuum chamber during at least the formation of the thin film, wherein
• at least a first material gas for forming a first thin film on said substrate and a second material gas for forming a second thin film on said substrate are fed from said gas introduction system, and
• the apparatus comprises a material gas controlling means for introducing said second material gas into said vacuum chamber at substantially the same time as the discharge of said first material gas from said vacuum chamber.

A thin film forming apparatus comprising a vacuum chamber, a substrate, a thermal catalyst, and a heating means for heating the thermal catalyst, wherein

• a gas introduction system for introducing a gas is connected to the vacuum chamber and wherein the gas is fed from the gas introduction system into the vacuum chamber to form a thin film on a surface of the substrate by utilizing a thermal decomposition reaction and a catalytic reaction by the thermal catalyst,
• the gas introduction system introduces a carrier gas containing hydrogen and a material gas for forming a thin film on the substrate, and
• the carrier gas is fed into the vacuum chamber during at least the formation of the thin film, wherein
• at least a first material gas for forming a first thin film on said substrate and a second material gas for forming a second thin film on said substrate are fed from said gas introduction system, and
• the apparatus comprises a material gas controlling means for introducing said second material gas into said vacuum chamber in a state where said first material gas remains in said vacuum chamber when said first material gas is discharged from said vacuum chamber.

A thin film forming apparatus comprising a vacuum chamber, a substrate, a thermal catalyst, and a heating means for heating the thermal catalyst, wherein

• a gas introduction system for introducing a gas is connected to the vacuum chamber and wherein the gas is fed from the gas introduction system into the vacuum chamber to form a thin film on a surface of the substrate by utilizing a thermal decomposition reaction and a catalytic reaction by the thermal catalyst,
• the gas introduction system introduces a carrier gas containing hydrogen and a material gas for forming a thin film on the substrate, and
• the carrier gas is fed into the vacuum chamber during at least the formation of the thin film, wherein
• said gas introduction system includes a gas spraying portion located in said vacuum chamber, and
• said gas spraying portion comprises a position adjusting means for changing a distance from said thermal catalyst.

A thin film forming apparatus comprising a vacuum chamber, a substrate, a thermal catalyst, and a heating means for heating the thermal catalyst, wherein

• a gas introduction system for introducing a gas is connected to the vacuum chamber and wherein the gas is fed from the gas introduction system into the vacuum chamber to form a thin film on a surface of the substrate by utilizing a thermal decomposition reaction and a catalytic reaction by the thermal catalyst,
• the gas introduction system introduces a carrier gas containing hydrogen and a material gas for forming a thin film on the substrate,
• the carrier gas is fed into the vacuum chamber during at least the formation of the thin film,
• a cooling means for cooling the gas is provided in at least the gas spraying portion to said thermal catalyst of said gas introduction system,
• wherein a gas shower plate with a plurality of spraying holes formed therein is arranged between the gas spraying port of said gas introduction system and said thermal catalyst.

A method for forming a thin film on a substrate in a vacuum chamber by catalytic CVD or high density plasma CVD or high density catalytic CVD, comprising:

• a cleaning step of feeding a carrier gas containing hydrogen to the vacuum chamber and cleaning the top of the substrate by activated hydrogen H* generated in the fed carrier gas, and
• a thin film forming step of forming the thin film on the substrate by feeding a material gas to the vacuum chamber,
• a silicon film being grown in at least a thin film semiconductor device forming region of said substrate by said cleaning step and said thin film forming step, and
• at least a gate insulating film being grown continuing from said silicon film.

A method for forming a thin film on a substrate in a vacuum chamber by catalytic CVD or high density plasma CVD or high density catalytic CVD, comprising:

• a cleaning step of feeding a carrier gas containing hydrogen to the vacuum chamber and cleaning the top of the substrate by activated hydrogen H* generated in the fed carrier gas, and
• a thin film forming step of forming the thin film on the substrate by feeding a material gas to the vacuum chamber,
• at least a gate insulating film being grown in at least the thin film semiconductor device forming region of said substrate with a gate electrode formed in advance therein by said cleaning step and said thin film forming step, and
• at least a silicon film being grown continuing from said gate insulating film.

A method for forming a thin film on a substrate in a vacuum chamber by catalytic CVD or high density plasma CVD or high density catalytic CVD, comprising:

• a cleaning step of feeding a carrier gas containing hydrogen to the vacuum chamber and cleaning the top of the substrate by activated hydrogen H* generated in the fed carrier gas, and
• a thin film forming step of forming a thin film on the substrate by feeding a material gas to the vacuum chamber,
• at least a first gate insulating film being grown in at least the thin film semiconductor device forming region of said substrate with the first gate electrode formed in advance therein by said cleaning step and said thin film forming step,
• a first thin film layer being formed by growing at least a silicon film continuing from said first gate insulating film, and
• at least a second gate insulating film for a second gate electrode being grown continuing from said first thin film layer.

A method for forming a thin film on a substrate in a vacuum chamber by catalytic CVD or high density plasma CVD or high density catalytic CVD, comprising:

• a cleaning step of feeding a carrier gas containing hydrogen to said vacuum chamber and cleaning the top of said substrate by the activated hydrogen H* generated in the carrier gas,
• a thin film forming step of forming a thin film on said substrate by feeding a material gas to said vacuum chamber, and
• a step of raising the concentration of the material gas in said vacuum chamber in the middle of the formation of the thin film on said substrate,
• a silicon film being grown in at least the thin film semiconductor device forming region of said substrate by said cleaning step, said thin film forming step, and said step of raising the concentration of the material gas, and
• at least a gate insulating film being grown continuing from said silicon film.

A method for forming a thin film on a substrate in a vacuum chamber by catalytic CVD or high density plasma CVD or high density catalytic CVD, comprising:

• a cleaning step of feeding a carrier gas containing hydrogen to said vacuum chamber and cleaning the top of said substrate by the activated hydrogen H* generated in the carrier gas,
• a thin film forming step of forming a thin film on said substrate by feeding a material gas to said vacuum chamber, and
• a step of raising the concentration of the material gas in said vacuum chamber in the middle of the formation of the thin film on said substrate,
• at least a gate insulating film being grown in at least the thin film semiconductor device forming region of said substrate with the gate electrode formed in advance therein by said cleaning step, said thin film forming step, and said step of raising the concentration of the material gas, and
• at least a silicon film being grown continuing from said gate insulating film.

A method for forming the thin film on the substrate in the vacuum chamber by catalytic CVD or high density plasma CVD or high density catalytic CVD, comprising:

• a cleaning step of feeding a carrier gas containing hydrogen to said vacuum chamber and cleaning the top of said substrate by the activated hydrogen H* generated in the carrier gas,
• a thin film forming step of forming a thin film on said substrate by feeding a material gas to said vacuum chamber, and
• a step the raising a concentration of the material gas in said vacuum chamber in the middle of the formation of the thin film on said substrate,
• at least a first gate insulating film being formed in at least the thin film semiconductor device forming region of said substrate with a first gate electrode formed in advance therein by said cleaning step, said thin film forming step, and said step of raising the concentration of the material gas,
• a first thin film layer being formed by growing at least a silicon film continuing from said first gate insulating film, and
• at least a second gate insulating film for a second gate electrode being formed continuing from said first thin film layer.

A method for producing a thin film semiconductor device including a thin film layer by forming a thin film layer on a substrate in a vacuum chamber by catalytic CVD or high density plasma CVD or high density catalytic CVD, comprising:

• a cleaning step of feeding a carrier gas containing hydrogen to said vacuum chamber and cleaning the top of said substrate by activated hydrogen H* generated in the fed carrier gas,
• a thin film forming step of forming the thin film on said substrate by feeding a material gas to said vacuum chamber,
• a step of raising the concentration of the material gas in said vacuum chamber in the middle of the formation of the thin film on said substrate, and
• a step of forming a thin film layer by stacking thin films on said substrate by said cleaning step, said thin film forming step, and said step of raising the concentration of the material gas, and supplying predetermined processing to the thin film layer to fabricate a semiconductor element.

A method for producing a thin film semiconductor device including a thin film layer by forming a thin film layer on a substrate in a vacuum chamber by catalytic CVD or high density plasma CVD or high density catalytic CVD, comprising:

• a cleaning step of feeding a carrier gas containing hydrogen to said vacuum chamber and cleaning the top of said substrate by activated hydrogen H* generated in the fed carrier gas,
• a thin film forming step of forming a thin film on said substrate by feeding a material gas to said vacuum chamber,
• a step of raising the concentration of the material gas in said vacuum chamber in the middle of the formation of the thin film on said substrate, and
• a step of growing a silicon film in at least the thin film semiconductor device forming region of said substrate by said cleaning step, said thin film forming step, and said step of raising the concentration of the material gas, forming a thin film layer by growing at least a gate insulating film continuing from the silicon film, and applying predetermined processing to the thin film layer to fabricate a top gate type TFT.

A method for producing a thin film semiconductor device including a thin film layer by forming a thin film layer on a substrate in a vacuum chamber by catalytic CVD or high density plasma CVD or high density catalytic CVD, comprising

• a cleaning step of feeding a carrier gas containing hydrogen to said vacuum chamber and cleaning the top of said substrate by activated hydrogen H* generated in the fed carrier gas,
• a thin film forming step of forming a thin film on said substrate by feeding a material gas to said vacuum chamber,
• a step of raising the concentration of the material gas in said vacuum chamber in the middle of the formation of the thin film on said substrate, and
• a step of growing at least a gate insulating film in at least the thin film semiconductor device forming region of said substrate with a gate electrode formed in advance therein by said cleaning step, said thin film forming step, and said step of raising the concentration of the material gas, forming a thin film layer by growing at least a silicon film continuing from the gate insulating film, and applying predetermined processing to the thin film layer to fabricate a bottom gate type TFT.

A method for producing a thin film semiconductor device including a thin film layer by forming a thin film layer on a substrate in a vacuum chamber by catalytic CVD or high density plasma CVD or high density catalytic CVD, comprising

• a cleaning step of feeding a carrier gas containing hydrogen to said vacuum chamber and cleaning the top of said substrate by activated hydrogen H* generated in the fed carrier gas,
• a thin film forming step of forming the thin film on said substrate by feeding a material gas to said vacuum chamber,
• a step of raising the concentration of the material gas in said vacuum chamber in the middle of the formation of the thin film on said substrate, and
• a step of growing at least a first gate insulating film in at least the thin film semiconductor device forming region of said substrate with a first gate electrode formed in advance therein by said cleaning step, said thin film forming step, and said step of raising the concentration of the material gas, forming a first thin film layer by growing at least a silicon film continuing from the first gate insulating film, forming a second thin film layer by growing at least a second gate insulating film for a second gate electrode continuing from the first thin film layer, and applying predetermined processing to said first thin film layer and second thin film layer to fabricate a dual gate type TFT.