Resistive memory device and method of fabricating the same

A resistive memory device with a cross-point structure, the device comprising:

• first conductive lines arranged in parallel over a substrate;
• second conductive lines arranged in parallel, spaced upwardly from the first conductive lines and extending across the first conductive lines;
• and a plurality of first resistive memory cells each being interposed between one of the first conductive lines and one of the second conductive lines at a cross-point of the first conductive line and the second conductive line, each first resistive memory cell comprising a first selection diode and a first resistive element stacked one upon another;
• wherein the first selection diode comprises a nanotube, and the first resistive element includes a first resistive layer;
• and wherein the vertical nanotube includes a carbon nanotube.

A method of fabricating a resistive memory device, the method comprising:

• forming a first conductive line over a substrate;
• forming a selection diode by growing a vertical over the first conductive line;
• forming a resistive element including a resistive layer over the selection diode;
• and forming a second conductive line over the resistive element;
• wherein the vertical nanotube includes a carbon nanotube.