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US 6,403,414 B2Granted
Method for producing low carbon/oxygen conductive layers
AssigneeMicron Technology, Inc.
InventorEugene P. Marsh
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Abstract
The present invention provides a method for forming a substantially carbon- and oxygen-free conductive layer, wherein the layer can contain a metal and/or a metalloid material. According to the present invention, a substantially carbon- and oxygen-free conductive layer is formed in an oxidizing atmosphere in the presence of an organometallic catalyst using, for example, a chemical vapor deposition process. Such layers are particularly advantageous for use in memory devices, such as dynamic random access memory (DRAM) devices.
Claims7
A method for use in formation of a capacitor on a substrate comprising the steps of:
- forming a surface of a substrate assembly;
- forming a first electrode on at least a portion of the surface of the substrate assembly, the first electrode comprising a substantially carbon- and oxygen-free layer deposited in an oxidizing atmosphere in the presence of an organometallic catalyst, wherein the substantially carbon- and oxygen-free layer is formed from a conductive metal-containing precursor, wherein the conductive metal of the precursor is different than the metal portion of the organometallic catalyst;
- forming a dielectric material over at least a portion of the first electrode;
- and
- forming a second electrode on at least a portion of the dielectric material.
2 more elements
Dependencies are inferred from the claim text.