Catalyst support substrate, method for growing carbon nanotubes using the same, and transistor using carbon nanotubes

A transistor comprising:

• a catalyst containing film which is placed on a substrate and grows carbon nanotubes in a vapor phase;
• said carbon nanotubes which are extended in the direction along a surface of said substrate from said catalyst containing film;
• a first electrode which is connected to a part of said catalyst containing film side of said carbon nanotubes;
• a second electrode which is connected to a part of another side of said carbon nanotubes;
• and
• a gate electrode which applies a voltage to said carbon nanotubes between said first electrode and said second electrode,
• wherein said catalyst containing film includes:
• a first region which is formed on a substrate;
• said first region including a catalyst supporting portion containing a first material,
• said first material including a metal containing at least one of elements selected from the second group to the fourteenth group of the periodic table or a compound thereof, an upper portion of the first region being oxidized or hydroxylated to form the catalyst supporting portion, and
• a second region which is formed covering a part of said first region;
• said second region including a catalyst portion containing a second material which is different from said first material,
• said second material is a catalyst which grows carbon nanotubes in a vapor phase.