Insitu post atomic layer deposition destruction of active species
AssigneeMicron Technology, Inc.
InventorsDemetrius Sarigiannis, Shuang Meng, Garo J Derderian
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AssigneeMicron Technology, Inc.
InventorsDemetrius Sarigiannis, Shuang Meng, Garo J Derderian
Estimating the term…
Systems and methods for insitu post atomic layer deposition (ALD) destruction of active species are provided. ALD processes deposit multiple atomic layers on a substrate. Pre-cursor gases typically enter a reactor and react with the substrate resulting in a monolayer of atoms. After the remaining gas is purged from the reactor, a second pre-cursor gas enters the reactor and the process is repeated. The active species of some pre-cursor gases do not readily purge from the reactor, thus increasing purge time and decreasing throughput. A high-temperature surface placed in the reactor downstream from the substrate substantially destroys the active species insitu. Substantially destroying the active species allows the reactor to be readily purged, increasing throughput.
A reactor for use in atomic layer deposition, the reactor comprising:
Dependencies are inferred from the claim text.