H10W 80/327
Characterised by the direct bonding of insulating parts
Official title: {characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers}
H10W80/327 (Characterised by the direct bonding of insulating parts) appears on 2,608 US grants and 4,465 published applications in this corpus.
Search patents in H10W- Granted patents
- 2,608
- Published applications
- 4,465
- Assignees
- 289
- Inventors
- 4,082
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 2 | 3 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 1 | 0 |
| 2006 | 3 | 3 |
| 2007 | 0 | 3 |
| 2008 | 1 | 10 |
| 2009 | 2 | 5 |
| 2010 | 3 | 15 |
| 2011 | 9 | 18 |
| 2012 | 10 | 32 |
| 2013 | 23 | 37 |
| 2014 | 40 | 40 |
| 2015 | 40 | 78 |
| 2016 | 66 | 67 |
| 2017 | 77 | 80 |
| 2018 | 94 | 114 |
| 2019 | 101 | 158 |
| 2020 | 179 | 306 |
| 2021 | 244 | 446 |
| 2022 | 306 | 500 |
| 2023 | 369 | 530 |
| 2024 | 330 | 643 |
| 2025 | 405 | 715 |
| 2026 | 299 | 661 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Process of fabricating three-dimensional semiconductor device576US 4,612,083 ANEC Corporation · 1986
- Interconnect structure for stacked semiconductor device573US 6,465,892 B1Fujitsu Limited · 2002
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- Method of room temperature covalent bonding315US 7,109,092 B2Ziptronix, Inc. · 2006
- Semiconductor device and associated fabrication method309US 5,753,536 AMatsushita Electric Industrial Co., Ltd. · 1998