Semiconductor device and associated fabrication method

A method of fabricating a semiconductor device comprising:

• (a) a first step of:
• forming, on a principal surface of a first semiconductor substrate having a first semiconductor element, a plurality of first electrodes which are electrically connected to said first semiconductor element;
• forming, on the principal surface of said first semiconductor substrate, a first insulating layer for insulating said plurality of first electrodes;
• forming, on a principal surface of a second semiconductor substrate having a second semiconductor element, a plurality of second electrodes which are electrically connected to said second semiconductor element wherein said plurality of second electrodes correspond in position to said plurality of first electrodes;
• forming, on the principal surface of said second semiconductor substrate, a second insulating layer for insulating said plurality of second electrodes;
• (b) a second step of:
• planarizing said plurality of first electrodes and said first insulating layer;
• and
• planarizing said plurality of second electrodes and said second insulating layer;
• (c) a third step of:
• aligning said first semiconductor substrate and said second semiconductor substrate such that said plurality of first electrodes and said plurality of second electrodes face one another;
• and
• (d) a fourth step of:
• press bonding said first semiconductor substrate and said second semiconductor substrate.

A method of fabricating a semiconductor device comprising:

• (a) a first step of:
• forming, on a principal surface of a first semiconductor substrate having a first semiconductor element, a first interconnect line that is electrically connected to said first semiconductor element;
• and
• forming, on a principal surface of a second semiconductor substrate having a second semiconductor element, a second interconnect line that is electrically connected to said second semiconductor element;
• (b) a second step of:
• forming, on the principal surface of said first semiconductor substrate having said first interconnect line, a first interlayer insulating film having therein a first opening region wherein said first opening region corresponds in position to said first interconnect line;
• forming, on the principal surface of said second semiconductor substrate having said second interconnect line, a second interlayer insulating film having therein a second opening region wherein said second opening region corresponds in position to said second interconnect line and to said first opening region;
• (c) a third step of:
• filling up said first and second opening regions with metal by means of an electroless plating process so as to form an electrode for establishing a connection between said first interconnect line and said second interconnect line;
• and
• (d) a fourth step of:
• bonding said first semiconductor substrate and said second semiconductor substrate by applying an insulating resin therebetween.

A method of fabricating a semiconductor device comprising:

• (a) a first step of:
• forming, on a principal surface of a first semiconductor substrate having a first semiconductor element, a first interconnect line that is electrically connected to said first semiconductor element;
• and
• forming, on a principal surface of a second semiconductor substrate having a second semiconductor element, a second interconnect line that is electrically connected to said second semiconductor element;
• (b) a second step of:
• forming, on the principal surface of said first semiconductor substrate having said first interconnect line, a resist pattern having an opening region wherein said opening region corresponds in position to said first interconnect line;
• (c) a third step of:
• filling up said opening region of said resist pattern with metal to form an electrode of connection;
• (d) a fourth step of:
• aligning said first and second semiconductor substrates such that said connection electrode and said second interconnect line are connected together, and press-bonding said first semiconductor substrate and said second semiconductor substrate while heating said first and second semiconductor substrates.

A method of fabricating a semiconductor device comprising:

• (a) a first step of:
• forming, on a principal surface of a first semiconductor substrate having a first semiconductor element, a first electrode which is electrically connected to said first semiconductor element;
• and
• forming, on a principal surface of a second semiconductor substrate having a second semiconductor element, a second electrode which is electrically connected to said second semiconductor element;
• (b) a second step of:
• forming, on a surface of said first semiconductor substrate opposite to said principal surface thereof, a first insulating layer capable of concaving the principal surface of said first semiconductor substrate;
• and
• forming, on a surface of said second semiconductor substrate opposite to said principal surface thereof, a second insulating layer capable of concaving said principal surface of said second semiconductor substrate;
• (c) a third step of:
• aligning said first and second semiconductor substrates such that said first and second electrodes face each other, and press-bonding said first and second semiconductor substrates while heating said first and second semiconductor substrates.