Semiconductor package and manufacturing method thereof

A semiconductor package, comprising:

• device dies having first die bonding layers respectively covering active sides of the device dies, wherein the first die bonding layers comprises first polymer layers, and first metallic features and second metallic features embedded in the first polymer layers, and wherein the second metallic features have a greater lateral dimension than the first metallic features;
• an encapsulant, laterally surrounding and in lateral contact with the device dies and the first die bonding layers;
• a first package bonding layer, covering the encapsulant and the first die bonding layers, wherein the first package bonding layer comprises a second polymer layer, and third metallic features and fourth metallic features embedded in the second polymer layer, and wherein a pitch and a pattern width of the third metallic features and the fourth metallic features of the first package bonding layer substantially corresponds to a pitch and a pattern width of the first metallic features and the second metallic features of the first die bonding layers;
• a bridge die, electrically communicating the device dies through the first metallic features and the third metallic features;
• electrical connectors, separated from the first die bonding layers via the first package bonding layer and electrically connected to the device dies through the second metallic features and the fourth metallic features;
• and
• a second die bonding layer, between the bridge die and the first package bonding layer.

A method for manufacturing a semiconductor package, comprising:

• forming first die bonding layers on device dies, respectively;
• forming a second die bonding layer on a bridge die;
• providing a first package bonding layer on a carrier substrate;
• bonding the first die bonding layers to the first package bonding layer;
• after bonding the first die bonding layers to the first package bonding layer, laterally encapsulating the device dies and the first die bonding layers by an encapsulant;
• after forming the encapsulant and detaching the carrier substrate, providing a second package bonding layer on the first package bonding layer;
• and
• bonding the second die bonding layer to the second package bonding layer, such that the device dies are electrically connected to the bridge die via conduction paths extending through polymer layers of the first die bonding layers, the first package bonding layer, the second package bonding layer, and the second die bonding layer, and the polymer layer of second die bonding layer is bonded to the polymer layer of the second package bonding layer.