H10W 20/481
On the rear surfaces of the wafers or substrates
Official title: {on the rear surfaces of the wafers or substrates}
H10W20/481 (On the rear surfaces of the wafers or substrates) appears on 1,120 US grants and 2,066 published applications in this corpus.
Search patents in H10W- Granted patents
- 1,120
- Published applications
- 2,066
- Assignees
- 127
- Inventors
- 2,079
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 3 | 1 |
| 2003 | 1 | 2 |
| 2004 | 2 | 2 |
| 2005 | 2 | 2 |
| 2006 | 2 | 1 |
| 2007 | 1 | 11 |
| 2008 | 4 | 10 |
| 2009 | 5 | 4 |
| 2010 | 9 | 10 |
| 2011 | 6 | 12 |
| 2012 | 11 | 13 |
| 2013 | 12 | 14 |
| 2014 | 19 | 18 |
| 2015 | 17 | 36 |
| 2016 | 29 | 26 |
| 2017 | 42 | 33 |
| 2018 | 29 | 37 |
| 2019 | 34 | 39 |
| 2020 | 44 | 58 |
| 2021 | 40 | 128 |
| 2022 | 97 | 250 |
| 2023 | 153 | 317 |
| 2024 | 182 | 436 |
| 2025 | 235 | 328 |
| 2026 | 137 | 278 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Complementary field effect transistor (CFET) circuits with vertical routing structures6 Oct 2026US 12,757,483 B2QUALCOMM Incorporated
- Semiconductor device having a through contact connected to a buried pattern and penetrating a field insulation film and an etch stop layer6 Oct 2026US 12,757,719 B2Samsung Electronics Co., Ltd.
- Method of manufacturing FinFET devices with backside power rail and backside self-aligned via25 Aug 2026US 12,720,795 B2Taiwan Semiconductor Manfacturing Company, Ltd.
- Semiconductor device25 Aug 2026US 12,720,802 B2Samsung Electronics Co., Ltd.
- Placeholder with dielectric liner protection to prevent direct backside contact (DBC) from shorting to gate25 Aug 2026US 12,720,853 B2International Business Machines Corporation
- Semiconductor device27 Aug 2026US 2026/0255953 A1Socionext Inc.
- Hotspot-free semiconductor device chips27 Aug 2026US 2026/0255959 A1Diamond Foundry Inc.
- Capacitance reduction for backside power rail device20 Aug 2026US 2026/0247653 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including power mesh20 Aug 2026US 2026/0247943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit structures having memory with backside power delivery20 Aug 2026US 2026/0247946 A1Intel Corporation
Most cited
By later US patents
- Three-dimensional integrated circuit and manufacturing method thereof617US 4,939,568 AFujitsu Limited · 1990
- Layer transfer process and functionally enhanced integrated circuits produced thereby298US 7,855,101 B2International Business Machines Corporation · 2010
- Methods of forming wiring to transistor and related transistor262US 7,666,723 B2International Business Machines Corporation · 2010
- 3D integrated circuits using thick metal for backside connections and offset bumps246US 7,410,884 B2Intel Corporation · 2008
- Dual-side interconnected CMOS for stacked integrated circuits246US 8,525,342 B2QUALCOMM Incorporated · 2013