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US 2026/0255959 A1Published application
Hotspot-free semiconductor device chips
AssigneeDiamond Foundry Inc.
InventorsJeroen Van Duren, Martin Roscheisen
Life of this patent
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Abstract
An integrated circuit (IC) may include a semiconductor material having a thickness of 100 microns or less. The semiconductor material having a major surface. One or more IC devices are formed in the semiconductor material proximate the major surface. One or more diamond layers having a thickness less than 500 microns are disposed on the major surface of the semiconductor material.
Claims38
An integrated circuit (IC), comprising:
- a semiconductor material having a thickness of 100 microns or less, the semiconductor material having a major surface;
- one or more IC devices formed in the semiconductor material proximate the major surface;
- and
- one or more diamond layers having a thickness less than 500 microns disposed on the major surface of the semiconductor material.
1 more element
A method, comprising:
- forming one or more integrated circuit (IC) devices in a semiconductor material having a thickness of 100 microns or less proximate a major surface of the semiconductor material;
- and
- disposing one or more diamond layers having a thickness less than 500 microns on the major surface of the semiconductor material.
Dependencies are inferred from the claim text.