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US 7,855,101 B2Granted
Layer transfer process and functionally enhanced integrated circuits produced thereby
AssigneeInternational Business Machines Corporation
InventorsBruce K. Furman, Sampath Purushothaman, Muthumanickam Sankarapandian, Anna Topol
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Abstract
A structure for a semiconductor components is provided having a device layer sandwiched on both sides by other active, passive, and interconnecting components. A wafer-level layer transfer process is used to create this planar (2D) IC structure with added functional enhancements.
Claims14
A method of forming an integrated device structure comprising:
- a) building a semiconductor device layer on a first substrate;
- b) providing a set of first functional elements to connect at least some of the devices in said semiconductor device layer;
- c) attaching a carrier substrate on top of said first functional elements;
- d) removing said first substrate to expose the bottom side of the said semicondcutor device layer;
- e) building a set of second functional elements on said exposed bottom side of said semiconductor device layer including electrical connections to at least some of the devices in said semiconductor device layer;
- f) attaching a foundation substrate to the exposed surface of said second functional elements;
- g) removing said carrier substrate from the top of said first functional elements;
- and
- h) providing input output connections on the exposed top surface of said first functional elements.
6 more elements
A method of forming an integrated device structure comprising:
- a) building a semiconductor device layer on a first substrate;
- b) providing a set of first functional elements to connect at least some of the devices in said semiconductor device layer;
- c) attaching a carrier substrate on top of said first functional elements;
- d) removing said first substrate to expose the bottom side of the said semicondcutor device layer;
- e) building a set of second functional elements on said exposed bottom side of said semiconductor device layer including electrical connections to at least some of the devices in said semiconductor device layer;
- f) attaching a foundation substrate to the exposed surface of said second functional elements;
- g) partially thinning said carrier substrate;
- h) building through vias and integrated elements in said thinned carrier substrate;
- and
- i) providing input output means such as solder connections and microjoint connections on said thinned carrier substrate.
7 more elements
Dependencies are inferred from the claim text.