H10W 20/055
By formation methods other than physical vapour deposition [pvd], chemical vapour deposition
Official title: {by formation methods other than physical vapour deposition [PVD], chemical vapour deposition [CVD] or liquid deposition}
H10W20/055 (By formation methods other than physical vapour deposition [pvd], chemical vapour deposition) appears on 840 US grants and 912 published applications in this corpus.
Search patents in H10W- Granted patents
- 840
- Published applications
- 912
- Assignees
- 178
- Inventors
- 1,360
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 5 | 0 |
| 1995 | 3 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 3 | 0 |
| 1999 | 4 | 0 |
| 2000 | 18 | 0 |
| 2001 | 16 | 7 |
| 2002 | 28 | 20 |
| 2003 | 17 | 14 |
| 2004 | 25 | 35 |
| 2005 | 17 | 36 |
| 2006 | 22 | 37 |
| 2007 | 19 | 27 |
| 2008 | 21 | 47 |
| 2009 | 16 | 47 |
| 2010 | 52 | 60 |
| 2011 | 53 | 48 |
| 2012 | 48 | 45 |
| 2013 | 38 | 35 |
| 2014 | 50 | 61 |
| 2015 | 42 | 56 |
| 2016 | 48 | 47 |
| 2017 | 62 | 45 |
| 2018 | 44 | 42 |
| 2019 | 41 | 27 |
| 2020 | 25 | 34 |
| 2021 | 23 | 24 |
| 2022 | 21 | 31 |
| 2023 | 19 | 33 |
| 2024 | 21 | 18 |
| 2025 | 25 | 22 |
| 2026 | 10 | 14 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor structure and manufacturing method thereof29 Sep 2026US 12,751,258 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Mitigating pattern collapse4 Aug 2026US 12,701,975 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Metal nitride diffusion barrier and methods of formation26 May 2026US 12,642,065 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit device26 May 2026US 12,642,076 B2Samsung Electronics Co., Ltd.
- Graphene barrier layer of interconnect structure28 Apr 2026US 12,616,018 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated junction silicide and selective metal capping with pullback24 Sep 2026US 2026/0293633 A1
- Method for manufacturing semiconductor substrate, method for etching substrate, and composition for surface modification27 Aug 2026US 2026/0250575 A1Tokyo Ohka Kogyo.Co., Ltd.
- Pre-treatment for sam removal improvement with less carbon residue13 Aug 2026US 2026/0234810 A1APPLIED Materials.Inc.
- Semiconductor structure and manufacturing method thereof13 Aug 2026US 2026/0239942 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Interconnect structure including vertical conductors and method for manufacturing the same30 Jul 2026US 2026/0223664 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Forming capping layer over metal wire structure using selective atomic layer deposition590US 7,084,060 B1International Business Machines Corporation · 2006
- Integrated circuit and manufacturing method of copper germanide and copper silicide as copper capping layer474US 7,858,519 B2Imec · 2010
- Method of manufracturing increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride471US 7,829,460 B2Globalfoundries Inc. · 2010
- Interconnect structure formed in porous dielectric material with minimized degradation and electromigration395US 6,528,409 B1Advanced Micro Devices, Inc. · 2003
- Protective self-aligned buffer layers for damascene interconnects330US 7,727,880 B1Novellus Systems, Inc. · 2010