Mitigating pattern collapse

A method for forming a semiconductor structure associated with mitigating pattern collapse, comprising:

• etching a first trench within a first dielectric layer;
• forming a first metal line within the first trench;
• forming a second dielectric layer above the first metal line and the first dielectric layer;
• etching a second trench within the second dielectric layer;
• forming a first metal line barrier layer within the second trench;
• filling a remainder of the second trench with a first metal material;
• and
• performing an anneal process after the filling a remainder of the second trench with a first metal material to change a composition of the first metal line barrier layer to form a self-formed barrier layer and to form a top barrier layer over the self-formed barrier layer.

A method for forming a semiconductor structure associated with mitigating pattern collapse, comprising:

• etching a first trench within a first dielectric layer;
• forming a first metal line within the first trench;
• forming a second dielectric layer above the first metal line and the first dielectric layer;
• forming a cap layer above the second dielectric layer;
• forming a hard mask (HM) above the cap layer etching a second trench within the second dielectric layer after the forming a HM, wherein a portion of the first metal line and a portion of the first dielectric layer are exposed through the second trench;
• forming a second metal line within the second trench;
• and
• after the forming a second metal line:
• removing at least some of the cap layer;
• removing at least some of the HM;
• and
• performing a chemical mechanical planarization (CMP) on at least one of the second dielectric layer or the second metal line.