Graphene barrier layer of interconnect structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShin-Yi Yang, Ming-Han Lee, Shau-Lin Shue
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Abstract
Interconnect structures and method of forming the same are disclosed herein. An exemplary interconnect structure includes a first contact feature in a first dielectric layer, a second dielectric layer over the first dielectric layer, a third dielectric layer over the second dielectric layer, a second contact feature extending through the second dielectric layer and the third dielectric layer, and a graphene layer between the second contact feature and the third dielectric layer.
Claims20
A contact structure, comprising:
- a first contact feature in a first dielectric layer;
- a second dielectric layer over the first dielectric layer and the first contact feature;
- a third dielectric layer over the second dielectric layer;
- a second contact feature extending through the second dielectric layer and the third dielectric layer to contact the first contact feature;
- and
- a barrier layer continuously extending between the second contact feature and the third dielectric layer, between the second contact feature and the second dielectric layer, and between a bottom surface of the second contact feature and a top surface of the first contact feature,
- wherein the second contact feature is formed of a seed metal that includes a catalytic surface for graphene formation.
A contact structure, comprising:
- a first dielectric layer having a first top surface;
- a first contact feature disposed in the first dielectric layer and comprising a second top surface coplanar with the first top surface;
- an etch stop layer disposed on the first top surface and the second top surface;
- a second dielectric layer over the etch stop layer;
- a third dielectric layer over the second dielectric layer;
- a second contact feature extending through the third dielectric layer, the second dielectric layer, and the etch stop layer to contact the first contact feature;
- and
- a barrier layer continuously extending between the second contact feature and the third dielectric layer, between the second contact feature and the second dielectric layer, between the second contact feature and the etch stop layer, and between a bottom surface of the second contact feature and a top surface of the first contact feature.
A contact structure, comprising:
- a first contact feature in a first dielectric layer;
- a second dielectric layer over the first dielectric layer and the first contact feature;
- a third dielectric layer over the second dielectric layer;
- a second contact feature extending through the second dielectric layer and the third dielectric layer to contact the first contact feature;
- and
- a graphene layer continuously extending between the second contact feature and the second dielectric layer, between the second contact feature and the third dielectric layer, and between a bottom surface of the second contact feature and a top surface of the first contact feature,
- wherein the second contact feature comprises a contact via portion and a metal line portion,
- wherein a portion of the graphene layer extends between and interfaces a bottom surface of the metal line portion and a top surface of the second dielectric layer.
Dependencies are inferred from the claim text.